Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NXP Semiconductors' BFR92AT/R is an NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 5000MHz, and hFE of 40. This small outline package transistor operates up to 150°C and can handle a max collector-emitter voltage of 15V.
Median Price
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Component Electronics Inc.
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$0.380
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$0.290
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$0.666
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Electronics Depot
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Digiode
Anansix
Prism Electronics
VNN
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Vyrian
Speed Components Ltd
Aztec Data Supply Inc.
$0.550
Corohmni
$0.780
One Stop Electronics
$10.050
AZTECH Wire
$11.762
Ampacity Inc.
$52.050
Semicontronic
$55.050
$53.674
$53.398
Perfect Parts
Continental Prestige Electronics
Argo Parts USA
Corphita
Glotronic Ltd.
UNI Independent Distributors
Bastille Electronics
This material is durable and lightweight, making the transistor suitable for a wide range of applications.
NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.
The single configuration simplifies circuit design and integration, making the transistor easy to use.
Designed specifically for amplifier applications, ensuring optimal performance in such circuits.
Surface mount compatibility allows for easy integration into modern PCB designs, saving space and reducing assembly time.
With a high power dissipation rating, this transistor can handle high power levels without overheating.
The high operating temperature range makes this transistor suitable for a variety of operating conditions.
The high transition frequency allows for efficient amplification of high-frequency signals, making this transistor ideal for L-band applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFR92AT/R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Qualification:
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFR92AT/R Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.75
SB
8541.21.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LL4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SPC TECHNOLOGY/ MULTICOMP
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
LM555CMX
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LIS2DH12TR
STMicroelectronics
LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.
2N2222A
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
1N4148
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
Comset Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Intertechnology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
Semiconductors
2N5399
2N5399 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is commonly used for switching applications in the ultra-high-frequency band due to its high power dissipation of 0.36W and low collector-base capacitance of 3pF.
MPSH10RLRAG
MPSH10RLRAG by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It has a max IC of 0.1A and Ptot of 0.35W, making it suitable for amplifier applications in the UHF band. The package is cylindrical with through-hole terminals and can operate up to 150°C.
BSX29
BSX29 by STMicroelectronics is a PNP RF small signal BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 150 °C, and has a nominal transition frequency of 700 MHz. Ideal for compact electronic circuits requiring efficient signal control.
MPSH10
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
LM3046M/NOPB
LM3046M/NOPB by Texas Instruments is an NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high-frequency band up to 550MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and operating temperature of 85°C, it offers reliable performance in various electronic circuits.
MPS3640
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
2SC5490A-TL-H
RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
2N4260
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .03 A; Qualification: Not Qualified; JEDEC-95 Code: TO-18;
KSC1674R
KSC1674R by Onsemi is an NPN BJT transistor for RF applications. It features a low VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for amplifiers in the ultra-high frequency band with a max operating temp of 150 °C.
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
BFU520XR,235
NXP Semiconductors
NXP Semiconductors' BFU520XR,235 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with a max fT of 10500 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.45 W and can handle up to 16 V collector-emitter voltage.
AT-32032-TR1G
Agilent Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .04 A; Moisture Sensitivity Level (MSL): 1; Terminal Position: DUAL;
EC3H02BA
The Onsemi EC3H02BA is an NPN RF BJT with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.1W, min DC current gain of 120, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 5000MHz requiring low collector current at 0.07A.
BFU550XRR
BFU550XRR by NXP Semiconductors is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 12V, and transition frequency of 11GHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-frequency performance.
SMMBTH10-4LT3G
SMMBTH10-4LT3G by Onsemi is an NPN RF BJT with 120 min hFE and 800 MHz fT. It has a 0.3W power dissipation, operates up to 150°C, and is suitable for surface mount applications in RF circuits.
2N5109A
Baneasa S A
RF Small Signal Bipolar Transistors; Surface Mount: NO; JEDEC-95 Code: TO-39; Package Body Material: METAL; Terminal Form: WIRE; Qualification: Not Qualified;
BFU520AR
The NXP Semiconductors BFU520AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It operates in L Band with a transition frequency of 10 GHz and can handle a max collector-emitter voltage of 12V. The package is surface mountable, featuring Gull Wing terminals and a small outline shape.
JANS2N2907AUB
Vpt Components
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel; Reference Standard: MIL-19500;
HFA3096BZ96
Renesas Electronics
HFA3096BZ96 by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and 8000 MHz fT. It's used for amplification in the UHF band, has 16 terminals, and is surface mountable. The package is small outline with gull wing terminals made of silicon material.
BFP196WH6327XTSA1
Infineon Technologies
BFP196WH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 7500 MHz, and max collector current of 0.15A. This small outline package transistor is designed for amplifier circuits in automotive electronics meeting AEC-Q101 standards.
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BFR93AE6327HTSA1
BFR93AE6327HTSA1 by Infineon Technologies is a NPN RF BJT with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.3W, hFE of 70, and fT of 6000MHz. This transistor operates at up to 150°C and features a collector-emitter voltage of 12V.
BFR92PE6327HTSA1
BFR92PE6327HTSA1 by Infineon is a NPN RF BJT transistor with max fT of 5000 MHz. It's ideal for L Band applications, featuring a max IC of 0.03 A and hFE of 70. With a package style of Small Outline, it operates up to 150 °C and has a max VCE of 15 V.
BFR93AWH6327XTSA1
BFR93AWH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCEO, 0.09A IC, and 6000MHz fT. Ideal for L Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.
BFR93A,215
NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.
BFR93AW,115
NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.
BFR93AW-E6327
BFR93AW-E6327 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in L Band with a transition frequency of 6000 MHz, ideal for amplifier applications. This small outline package has a max power dissipation of 0.3 W and can handle up to 12 V collector-emitter voltage.
Siemens
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 3;
BFR92AW,115
NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.
BFR93AR,215
NXP Semiconductors' BFR93AR,215 is a NPN RF BJT transistor with 3 terminals. It operates in C band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle up to 12V collector-emitter voltage.
BFR93A,235
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;
BFR93A
Vishay Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .09 A;
RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
Motorola
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 12 V;
Temic Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Philips Components
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;
BFR92A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; No. of Terminals: 3;
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