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BFP720H6327XTSA1

Infineon Technologies

BFP720H6327XTSA1 by Infineon Technologies

BFP720H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, max. collector-emitter voltage of 4V, and fT of 45GHz. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier circuits.

Median Price

$0.221

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,487 parts In-Stock

1+ parts

$0.163

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$0.163

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Mouser Electronics

USA . 188 parts In-Stock

1+ parts

$0.390

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$0.225

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$0.198

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$0.187

188

$0.390

$0.225

$0.198

$0.187

Newark

USA . 68 parts In-Stock

1+ parts

$0.422

100+ parts

$0.224

1k+ parts

$0.207

10k+ parts

-

68

$0.422

$0.224

$0.207

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Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.020

100+ parts

$0.969

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$0.969

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500

$1.020

$0.969

$0.969

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Rochester

USA . 441,568 parts In-Stock

1+ parts

-

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$0.230

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$0.191

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$0.170

441,568

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$0.230

$0.191

$0.170

Verical

USA . 234,000 parts In-Stock

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$0.212

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$0.212

Future Electronics

Canada . 3,000 parts In-Stock

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$0.161

3,000

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$0.161

Chip1Stop

Japan . 1,775 parts In-Stock

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RS (Exports)

UK . 1,290 parts In-Stock

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100+ parts

$0.159

1k+ parts

$0.493

10k+ parts

$0.453

1,290

-

$0.159

$0.493

$0.453

Element14

Singapore . 440 parts In-Stock

1+ parts

-

100+ parts

$0.333

1k+ parts

$0.196

10k+ parts

$0.192

440

-

$0.333

$0.196

$0.192

Farnell

UK . 126 parts In-Stock

1+ parts

-

100+ parts

$0.187

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$0.173

10k+ parts

$0.163

126

-

$0.187

$0.173

$0.163

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 184 parts In-Stock

1+ parts

$0.153

100+ parts

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184

$0.153

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Nova Conductors

Japan . 300 parts In-Stock

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$0.221

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300

$0.221

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Vyrian

USA . 57,412 parts In-Stock

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DigiKey Marketplace

USA . 30,000 parts In-Stock

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VNN

France . 1,521 parts In-Stock

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Bristol Electronics

USA . 1,227 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 62,502 parts In-Stock

1+ parts

$0.116

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62,502

$0.116

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Semicontronic

India . 62,319 parts In-Stock

1+ parts

$0.116

100+ parts

$0.113

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$0.113

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62,319

$0.116

$0.113

$0.113

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Corphita

USA . 501 parts In-Stock

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$0.145

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501

$0.145

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Argo Parts USA

USA . 4,791 parts In-Stock

1+ parts

$0.221

100+ parts

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$0.214

4,791

$0.221

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-

$0.214

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.221

100+ parts

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$0.210

10k+ parts

$0.206

100

$0.221

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$0.210

$0.206

Corohmni

South Africa . 156 parts In-Stock

1+ parts

$0.343

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156

$0.343

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.020

100+ parts

$0.969

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$0.969

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500

$1.020

$0.969

$0.969

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Modulus Dynamics

Lithuania . 6,152 parts In-Stock

1+ parts

$1.373

100+ parts

$1.318

1k+ parts

$1.263

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6,152

$1.373

$1.318

$1.263

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Aztec Data Supply Inc.

USA . 1,504 parts In-Stock

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$1.928

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1,504

$1.928

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Perfect Parts

USA . 18,805 parts In-Stock

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Continental Prestige Electronics

USA . 475 parts In-Stock

1+ parts

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100+ parts

$0.305

1k+ parts

$0.206

10k+ parts

$0.182

475

-

$0.305

$0.206

$0.182

Overview

Unlock the power of cutting-edge technology with the BFP720H6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor promises unrivaled quality and performance. Ideal for amplifier applications in the X Band frequency range, this NPN transistor boasts a compact design and superior materials for seamless integration. Elevate your projects with the reliability and innovation that only Infineon can deliver. Experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, offering high input impedance and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easy to implement in circuit designs and offer straightforward operation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability makes installation and soldering easy, enabling compact and efficient circuit designs.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on circuit boards, optimizing space usage and layout design.

Terminal Form: GULL WING

Gull-wing terminals provide secure connection points for easy soldering and reliable electrical connections.

Maximum Collector-Emitter Voltage: 4 V

With a maximum voltage of 4V, this transistor is suitable for low voltage applications, preventing damage from excess voltage.

Maximum Collector Current (IC): 0.025 A

With a maximum current of 0.025A, this transistor can handle moderate current loads, suitable for many small signal amplification applications.

Nominal Transition Frequency (fT): 45000 MHz

High transition frequency allows for fast switching speeds and high-frequency signal amplification, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP720H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4 V

Configuration:

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM CARBON

Nominal Transition Frequency (fT):

Trade Compliance

BFP720H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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