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BFP740E6327

Infineon Technologies

BFP740E6327 by Infineon Technologies

BFP740E6327 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for amplifier applications in C band frequencies. It features Gull Wing terminals, 160 min hFE, and can operate b/w -55 to 150 °C with a max collector-emitter voltage of 4 V.

Median Price

$0.397

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 31,830 parts In-Stock

1+ parts

-

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-

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$0.404

10k+ parts

$0.360

31,830

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-

$0.404

$0.360

Rochester

USA . 31,830 parts In-Stock

1+ parts

-

100+ parts

$0.390

1k+ parts

$0.323

10k+ parts

$0.288

31,830

-

$0.390

$0.323

$0.288

DigiKey

USA . 31,830 parts In-Stock

1+ parts

-

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$0.490

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31,830

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-

$0.490

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

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$0.266

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$0.202

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$0.179

3,000

-

$0.266

$0.202

$0.179

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.232

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10

$0.232

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Digiode

USA . 376 parts In-Stock

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$0.303

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376

$0.303

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Vyrian

USA . 24,256 parts In-Stock

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24,256

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VNN

France . 11,477 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5,742 parts In-Stock

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5,742

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Euro-Tech

UK . 680 parts In-Stock

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680

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Distributors (Availability)

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Ampacity Inc.

Singapore . 24,617 parts In-Stock

1+ parts

$0.139

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24,617

$0.139

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Continental Prestige Electronics

USA . 2,243 parts In-Stock

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$0.232

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$0.227

2,243

$0.232

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$0.227

Argo Parts USA

USA . 1,805 parts In-Stock

1+ parts

$0.232

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$0.225

1,805

$0.232

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$0.225

Netroflash

USA . 100 parts In-Stock

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$0.232

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100

$0.232

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Corphita

USA . 765 parts In-Stock

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$0.287

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765

$0.287

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Modulus Dynamics

Lithuania . 13,416 parts In-Stock

1+ parts

$1.407

100+ parts

$1.351

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$1.294

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13,416

$1.407

$1.351

$1.294

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Andel Nordic

Denmark . 839 parts In-Stock

1+ parts

$22.060

100+ parts

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$15.439

10k+ parts

$15.439

839

$22.060

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$15.439

$15.439

Perfect Parts

USA . 12,862 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,112 parts In-Stock

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Lixinc

USA . 6,343 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 5,742 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,341 parts In-Stock

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Kepictronics

USA . 2,335 parts In-Stock

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Assy Fe

Spain . 1,319 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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$8.000

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$7.408

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$7.408

250

-

$8.000

$7.408

$7.408

Overview

Elevate your amplification needs with the BFP740E6327 by Infineon Technologies. Designed with precision and quality in mind, this RF Small Signal Bipolar Junction Transistor offers unparalleled performance in a compact package. Perfect for applications in the C Band frequency range, this NPN transistor boasts a minimum power gain of 19.5 dB and a minimum DC current gain of 160. Whether you're looking to enhance signal strength or improve overall performance, the BFP740E6327 delivers exceptional value and reliability. Upgrade your amplification capabilities today with this cutting-edge technology from Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures ease of integration in electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and output.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design in compact electronic devices.

Minimum Power Gain (Gp): 19.5 dB

High power gain ensures efficient signal amplification and excellent performance in RF applications.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor and easier handling during assembly and installation.

Terminal Form: GULL WING

Gull wing terminals allow for efficient soldering and secure connections in the circuit.

Highest Frequency Band: C BAND

Suitable for high-frequency C band applications, ensuring compatibility with a wide range of RF systems.

No. of Terminals: 4

4 terminals offer flexibility in circuit connections and allow for versatile usage in various electronic designs.

Maximum Power Dissipation (Abs): 0.16 W

High power dissipation capability ensures reliability and performance even under demanding conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style reduces space requirements and enables compact circuit board designs.

Minimum DC Current Gain (hFE): 160

High minimum DC current gain ensures stable and consistent amplification performance in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the transistor suitable for extreme temperature environments.

Maximum Collector-Base Capacitance: 0.08 pF

Low collector-base capacitance minimizes signal distortion and ensures high-speed operation.

Maximum Collector-Emitter Voltage: 4 V

High collector-emitter voltage rating allows for reliable operation in high voltage applications.

Transistor Element Material: SILICON GERMANIUM CARBON

High-quality semiconductor material ensures durability and stable performance over time.

Minimum Operating Temperature: -55 °C

Low operating temperature range enables reliable performance even in cold environments.

Maximum Collector Current (IC): 0.045 A

High collector current rating allows for efficient amplification and handling of current in the circuit.

Terminal Position: DUAL

Dual terminal position enhances flexibility in circuit connections and facilitates integration in electronic systems.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure solder joints and reliable connections during assembly.

Nominal Transition Frequency (fT): 44000 MHz

High transition frequency enables fast switching speeds and ensures high-frequency performance in RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP740E6327 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.08 pF

Maximum Collector-Emitter Voltage:

4 V

Configuration:

Minimum DC Current Gain (hFE):

160

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

19.5 dB

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM CARBON

Nominal Transition Frequency (fT):

Trade Compliance

BFP740E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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