Loading...

2N5399

Texas Instruments

2N5399 by Texas Instruments

2N5399 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is commonly used for switching applications in the ultra-high-frequency band due to its high power dissipation of 0.36W and low collector-base capacitance of 3pF.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,055

-

-

-

-

Digiode

USA . 259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

259

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,283 parts In-Stock

1+ parts

$1.528

100+ parts

-

1k+ parts

$2.184

10k+ parts

-

1,283

$1.528

-

$2.184

-

DigiPath Technology Company

USA . 529 parts In-Stock

1+ parts

$1.683

100+ parts

-

1k+ parts

-

10k+ parts

-

529

$1.683

-

-

-

ChromeModa Solutions

Germany . 6,350 parts In-Stock

1+ parts

$1.717

100+ parts

$1.408

1k+ parts

-

10k+ parts

-

6,350

$1.717

$1.408

-

-

IDEA Electronic Components Group

UK . 715 parts In-Stock

1+ parts

$1.717

100+ parts

-

1k+ parts

$1.545

10k+ parts

-

715

$1.717

-

$1.545

-

Northwest PG Solutions

USA . 1,263 parts In-Stock

1+ parts

$2.847

100+ parts

-

1k+ parts

-

10k+ parts

-

1,263

$2.847

-

-

-

Semicontronic

India . 1,061 parts In-Stock

1+ parts

$9.050

100+ parts

$8.824

1k+ parts

$8.778

10k+ parts

-

1,061

$9.050

$8.824

$8.778

-

AZTECH Wire

Italy . 637 parts In-Stock

1+ parts

$16.961

100+ parts

-

1k+ parts

-

10k+ parts

-

637

$16.961

-

-

-

Ampacity Inc.

Singapore . 214 parts In-Stock

1+ parts

$20.050

100+ parts

-

1k+ parts

-

10k+ parts

-

214

$20.050

-

-

-

One Stop Electronics

USA . 1,203 parts In-Stock

1+ parts

$39.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

$39.050

-

-

-

Corphita

USA . 4,540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,540

-

-

-

-

Native Components

USA . 499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.510

10k+ parts

-

499

-

-

$2.510

-

Corohmni

South Africa . 383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

383

-

-

-

-

Overview

Experience superior performance with the 2N5399 by Texas Instruments, a top-tier manufacturer known for reliability and innovation. This RF Small Signal Bipolar Junction Transistor (BJT) offers a single NPN configuration ideal for switching applications in the ultra-high-frequency band. With a maximum power dissipation of 0.36 W and a nominal transition frequency of 600 MHz, this transistor delivers exceptional value and efficiency. Upgrade your electronic projects with the quality and precision of Texas Instruments' 2N5399.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides good heat dissipation, increasing the reliability and longevity of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for various switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into existing electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Terminal Form: WIRE

Wire terminals provide easy connection to external circuits, making installation and maintenance simpler.

Maximum Power Dissipation: 0.36 W

With a high power dissipation rating, this transistor can handle high power levels without overheating.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this transistor to operate reliably in hot environments.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance reduces the risk of signal distortion, making this transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

With a high collector-emitter voltage rating, this transistor can withstand high voltage levels, increasing its versatility.

Maximum Collector Current (IC): 0.1 A

Able to handle relatively high collector currents, making it suitable for medium-power applications.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for fast switching speeds, making this transistor ideal for high-frequency circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N5399 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-46

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5399 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-328-2838, 5961013282838

NIIN

013282838

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 1