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2N5332

Texas Instruments

2N5332 by Texas Instruments

2N5332 by Texas Instruments is a PNP BJT transistor with 3 terminals, suitable for switching applications. It operates in the ultra-high frequency band up to 800 MHz, with a max collector-emitter voltage of 12V and a DC current gain of at least 20 (hFE). The package style is cylindrical, and it has a max power dissipation of 0.36W at an operating temperature of 175°C.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 3,246 parts In-Stock

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PUI

USA . 996 parts In-Stock

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Digiode

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Resion

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Parana Technologies

USA . 367 parts In-Stock

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$1.255

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$2.025

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DigiPath Technology Company

USA . 2,072 parts In-Stock

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$1.382

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$1.271

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IDEA Electronic Components Group

UK . 2,009 parts In-Stock

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$1.410

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$1.269

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ChromeModa Solutions

Germany . 634 parts In-Stock

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$1.410

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$1.156

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Native Components

USA . 429 parts In-Stock

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$6.317

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AZTECH Wire

Italy . 620 parts In-Stock

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$13.288

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One Stop Electronics

USA . 1,622 parts In-Stock

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$55.050

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Corphita

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Northwest PG Solutions

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Overview

Unleash the power of high-quality RF Small Signal Bipolar Junction Transistors with the 2N5332 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-notch products like the 2N5332 that are ideal for switching applications in the ultra-high frequency band. With a single configuration and PNP polarity, this transistor offers reliable performance with a maximum collector-emitter voltage of 12V and a nominal transition frequency of 800 MHz. Trust in Texas Instruments to provide cutting-edge technology that meets your needs for efficient and effective electronic solutions.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides high durability and better thermal conductivity, ensuring reliability and efficient heat dissipation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high speed switching applications, making this product suitable for fast switching purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in switching operations.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it suitable for compact and space-constrained designs.

Maximum Power Dissipation (Abs): 0.36 W

With a high maximum power dissipation, this transistor can handle more power without overheating, improving overall reliability.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, ensuring stable performance even in demanding environments.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N5332 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-46

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5332 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-073-8119, 5961010738119

NIIN

010738119

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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