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2N3114

Texas Instruments

2N3114 by Texas Instruments

2N3114 by Texas Instruments is a NPN BJT transistor for RF applications. With max. power dissipation of 0.8W, it operates in the very high frequency band up to 40MHz. Ideal for amplifier circuits, it has a max. collector-emitter voltage of 150V and max. collector current of 0.2A.

Median Price

$5.690

Lifecycle Status

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American Microsemiconductor Inc.

USA . 23 parts In-Stock

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ComSIT Distribution GmbH

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Digiode

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Vyrian

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Anansix

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Inland Empire Components Inc.

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Pride Electronics

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PUI

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ABC Electronics Ltd.

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Prism Electronics

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LWI Electronics Inc

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ECAB

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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Sensible Micro Corp

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Manoshevitz Elec. Sales

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LittleDiode

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Resion

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ACDS - Activité Composants Distribution Service

France . 12 parts In-Stock

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ICP Electronique

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Electronics Depot

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Speed Components Ltd

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Microfarads

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Odi Ramu Company

Canada . 2 parts In-Stock

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First Choice Components Inc.

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Bristol Electronics

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ChromeModa Solutions

Germany . 1,040 parts In-Stock

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$0.476

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$0.390

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$0.476

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IDEA Electronic Components Group

UK . 3,240 parts In-Stock

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$1.545

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DigiPath Technology Company

USA . 3,092 parts In-Stock

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MKK Technologies

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AZTECH Wire

Italy . 754 parts In-Stock

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One Stop Electronics

USA . 914 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Northwest PG Solutions

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Parana Technologies

USA . 2,935 parts In-Stock

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$2.053

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Supply Digital

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Native Components

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Perfect Parts

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Eliminating Global Boundries, Inc

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Assy Fe

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Overview

Elevate your amplifier designs with the 2N3114 from Texas Instruments, a top-tier manufacturer known for quality and innovation in RF small signal bipolar junction transistors. This NPN transistor offers exceptional performance in the very high-frequency band, with a maximum power dissipation of 0.8W and a maximum collector-emitter voltage of 150V. Whether you're amplifying signals or enhancing radio frequency applications, the 2N3114 delivers reliable and efficient operation. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides good thermal conductivity, helping to dissipate heat efficiently and enhance the overall reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and integration of the transistor into amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Very high frequency band capability allows for efficient signal amplification in applications requiring high frequency operation.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures the transistor can provide sufficient amplification in amplifier circuits.

Maximum Collector-Emitter Voltage: 150 V

The high maximum collector-emitter voltage rating of 150V allows for versatility in amplifier circuit design.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2A, this transistor can handle moderate current levels in amplifier circuits.

Nominal Transition Frequency (fT): 40 MHz

Nominal transition frequency of 40MHz indicates high-speed signal amplification capabilities for efficient amplifier performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N3114 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

9 pF

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3114 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-108-4315, 5961001084315, 5961-00-419-7475, 5961004197475, 5961-00-905-3233, 5961009053233, 5961-00-949-1229, 5961009491229, 5961-14-301-3343, 5961143013343, 5961-15-053-7125, 5961150537125, 5961-99-118-4606, 5961991184606, 5961-15-059-2931, 5961150592931, 5961-99-118-2715, 5961991182715

NIIN

001084315, 004197475, 009053233, 009491229, 143013343, 150537125, 991184606, 150592931, 991182715

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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