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2N3137

STMicroelectronics

2N3137 by STMicroelectronics

2N3137 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 2W, operates up to 175 °C, and has a nominal transition frequency of 750 MHz. Ideal for very high-frequency circuits, it ensures reliable performance.

Median Price

$4.110

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

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American Microsemiconductor Inc.

USA . 100 parts In-Stock

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Digiode

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Anansix

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ComSIT Distribution GmbH

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Corel Iberica Componentes, S.L.

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ECAB

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Vyrian

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Electronic Expediters

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PAR Electronics

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Manotoh

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ICP Electronique

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ACDS - Activité Composants Distribution Service

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LittleDiode

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Electro Mavin

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Zilex Electronics Inc.

Canada . 10 parts In-Stock

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Sinequanon

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Lakeview Electronics

USA . 10 parts In-Stock

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Component Electronics Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Resion

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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Mil-Aero Solutions, Inc.

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Prism Electronics

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Electronics Depot

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GES GmbH

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Odi Ramu Company

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Distributors (Availability)

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Native Components

USA . 748 parts In-Stock

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$0.360

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$0.346

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$0.360

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Northwest PG Solutions

USA . 2,132 parts In-Stock

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$0.396

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$0.349

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IDEA Electronic Components Group

UK . 1,505 parts In-Stock

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MKK Technologies

India . 1,538 parts In-Stock

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DigiPath Technology Company

USA . 1,538 parts In-Stock

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Corphita

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Supply Digital

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Parana Technologies

USA . 84 parts In-Stock

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RTC Component Inc.

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Overview

Unlock the power of precision with the 2N3137 by STMicroelectronics, a leading name in the semiconductor industry. This NPN transistor excels as an amplifier in high-frequency applications, delivering incredible reliability and performance. Crafted from premium materials, its robust design ensures durability under challenging conditions. Experience enhanced signal amplification that meets your most demanding projects, providing exceptional value and seamless integration for innovative solutions across various industries.

Feature Benefit Bullets

Package Body Material: METAL

Metal package ensures better thermal conductivity and durability, making it suitable for high-performance applications.

Polarity or Channel Type: NPN

NPN configuration is widely used and is ideal for high-speed switching applications.

Configuration: SINGLE

Single configuration allows for straightforward integration into circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, offering high gain and low noise performance.

Package Shape: ROUND

Round package shape is optimized for mounting and heat dissipation in compact spaces.

Terminal Form: WIRE

Wire terminals provide flexible connection options for different circuit layouts.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capability to operate in the very high-frequency band makes it suitable for RF applications.

No. of Terminals: 3

Three terminals offer necessary connections for optimal circuit functionality.

Maximum Power Dissipation (Abs): 2 W

High maximum power dissipation allows the transistor to handle substantial power without overheating in applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is easily packaged for various applications and ensures effective space utilization.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures good amplification capabilities, enabling effective signal processing.

Maximum Operating Temperature: 175 °C

High maximum operating temperature supports use in demanding environments and enhances reliability.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance allows for higher speeds and better performance in RF applications.

Maximum Collector-Emitter Voltage: 20 V

A maximum collector-emitter voltage of 20V provides a good voltage range for various circuits.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and is standard in modern transistor technology.

Maximum Collector Current (IC): 0.15 A

Allows for sufficient current handling in amplifier applications while maintaining performance efficiency.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability for easier manufacturing and assembly.

Terminal Position: BOTTOM

Bottom terminal position facilitates effective mounting in space-constrained designs.

Nominal Transition Frequency (fT): 750 MHz

A nominal transition frequency of 750 MHz indicates suitability for high-speed applications, improving overall performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N3137 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3137 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-944-3520, 5961009443520, 5961-00-410-3834, 5961004103834, 5961-15-060-6259, 5961150606259, 5961-15-056-2686, 5961150562686

NIIN

009443520, 004103834, 150606259, 150562686

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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