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LM3146N

National Semiconductor

LM3146N by National Semiconductor

LM3146N by National Semiconductor is an NPN BJT with 5 elements and 14 terminals. It operates in the very high-frequency band up to 500 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 30V and max collector current of 0.05A, it offers complex configuration in a rectangular package suitable for through-hole mounting.

Median Price

$8.590

Lifecycle Status

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American Microsemiconductor Inc.

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Ampacity Inc.

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Overview

Elevate your amplification game with the LM3146N by National Semiconductor. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor offers unparalleled performance in a variety of applications. From audio amplifiers to radio frequency circuits, this NPN transistor delivers exceptional quality and reliability. With a maximum operating temperature of 85°C and a nominal transition frequency of 500 MHz, this complex configuration transistor is designed to meet your high-frequency needs. Say hello to superior signal amplification with the LM3146N - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good thermal stability and high reliability, making the product suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing high efficiency and low noise operation.

Configuration: COMPLEX

Complex configuration allows for versatile circuit designs and implementation in a wide range of electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring high performance and signal amplification capabilities.

Package Shape: RECTANGULAR

Rectangular package shape offers easy installation and compact design, ideal for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals are convenient for manual soldering and provide strong mechanical connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for very high frequency applications, ensuring reliable performance in high-speed circuits.

No. of Elements: 5

Multiple elements increase the functionality and versatility of the transistor, allowing for complex circuit designs.

No. of Terminals: 14

More terminals provide greater connectivity options and flexibility in circuit integration.

Package Style (Meter): IN-LINE

In-line package style offers efficient assembly and integration into circuits, simplifying the manufacturing process.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures consistent and stable performance in amplification applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable operation in various environments and conditions.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, the transistor can handle higher voltage applications.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.05 A

Maximum collector current of 0.05A allows for efficient power handling and reliable performance in various circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures strong electrical connections.

Terminal Position: DUAL

Dual terminal position offers multiple mounting options and flexibility in circuit design and layout.

Nominal Transition Frequency (fT): 500 MHz

High nominal transition frequency of 500MHz ensures fast response times and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) LM3146N attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

No. of Elements:

5

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

LM3146N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-01-152-6637, 5962011526637

NIIN

011526637

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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