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MPS918G

Onsemi

MPS918G by Onsemi

MPS918G by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.625W and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

Median Price

$1.704

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 3,000 parts In-Stock

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$1.704

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$1.687

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$1.704

$1.687

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Digiode

USA . 2,487 parts In-Stock

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$1.619

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2,487

$1.619

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Vyrian

USA . 7,919 parts In-Stock

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Dark Horse Electronics

USA . 72 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,965 parts In-Stock

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$1.534

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1,965

$1.534

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.704

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$1.687

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$1.619

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3,000

$1.704

$1.687

$1.619

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Corohmni

South Africa . 215 parts In-Stock

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$1.704

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215

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AZTECH Wire

Italy . 677 parts In-Stock

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$11.440

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677

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TANS Electronics

Latvia . 2,604 parts In-Stock

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Problanco Electronics

Mexico . 2,050 parts In-Stock

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SupplyDigital Components

Austria . 1,043 parts In-Stock

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Kulean Microsystems

USA . 995 parts In-Stock

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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Overview

Looking for a high-quality RF small signal BJT transistor to amplify your signals effectively? Look no further than the MPS918G by Onsemi. With its NPN polarity and ultra-high frequency band capabilities, this transistor is perfect for amplifier applications. Onsemi, known for their reliable and innovative electronic components, has designed this transistor with a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 15V. Experience the value and benefits of the MPS918G for yourself and take your electronic projects to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes integration easier.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering during assembly.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, ensuring consistent performance under various environmental conditions.

Maximum Collector Current (IC): 0.05 A

Can handle a maximum collector current of 0.05 A, suitable for low-power amplification applications.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for fast signal amplification and processing, ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS918G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS918G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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