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FFB3946

Onsemi

FFB3946 by Onsemi

The Onsemi FFB3946 is a RF BJT transistor with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max voltage of 40V and max current of 0.2A. Operating up to 150 °C, it offers a transition frequency of 200MHz for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 2,052 parts In-Stock

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Digiode

USA . 1,504 parts In-Stock

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Vyrian

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Native Components

USA . 934 parts In-Stock

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$0.557

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Northwest PG Solutions

USA . 877 parts In-Stock

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$0.612

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Perfect Parts

USA . 21,124 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 7,857 parts In-Stock

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TANS Electronics

Latvia . 4,387 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Corphita

USA . 2,505 parts In-Stock

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Supply Digital

USA . 1,025 parts In-Stock

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Kulean Microsystems

USA . 532 parts In-Stock

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UHIMA Technologies

Türkiye . 366 parts In-Stock

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SupplyDigital Components

Austria . 119 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Overview

Elevate your electronic designs with the FFB3946 by Onsemi, a high-quality RF Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this transistor is perfect for various switching applications. With its NPN and PNP configuration, small outline package style, and dual terminal position, the FFB3946 provides value and benefits that will enhance your projects. Experience the advantages of Onsemi's cutting-edge technology and elevate your designs to new heights with the FFB3946.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the BJT, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

This BJT offers flexibility by providing both NPN and PNP polarity or channel types, allowing for versatile circuit design options.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT delivers fast response and efficient performance in switching circuits.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum collector-emitter voltage of 40V, this BJT can handle higher voltage levels in circuits, ensuring reliable operation.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200 MHz indicates that this BJT is capable of operating at higher speeds, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) FFB3946 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

FFB3946 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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