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BF224RL1

Onsemi

BF224RL1 by Onsemi

BF224RL1 by Onsemi is a NPN RF BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for very high frequency band applications due to its single configuration and cylindrical package style. Operates up to 150 °C with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,256 parts In-Stock

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Digiode

USA . 96 parts In-Stock

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Kulean Microsystems

USA . 7,174 parts In-Stock

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TANS Electronics

Latvia . 4,701 parts In-Stock

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Problanco Electronics

Mexico . 4,179 parts In-Stock

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Northwest PG Solutions

USA . 2,058 parts In-Stock

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Corphita

USA . 1,068 parts In-Stock

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SupplyDigital Components

Austria . 770 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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Native Components

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the BF224RL1 by Onsemi, a top-of-the-line RF Small Signal Bipolar Junction Transistor (BJT) that delivers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor offers a single configuration with very high frequency band capabilities, making it ideal for a wide range of applications. From telecommunications to industrial electronics, this versatile transistor is designed to meet your needs with precision and efficiency. Experience the value and benefits of Onsemi's superior quality products with the BF224RL1, where innovation meets excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, making this product versatile and suitable for a range of circuit designs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With a very high frequency band, this transistor is ideal for applications requiring fast signal processing and high-speed operations.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating allows for use in circuits with higher voltage requirements, increasing the versatility of this transistor.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor can handle moderate current loads, making it suitable for various electronic applications.

Nominal Transition Frequency (fT): 850 MHz

The high transition frequency of 850 MHz indicates the speed at which this transistor can operate, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF224RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF224RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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