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BF224RLRA

Onsemi

BF224RLRA by Onsemi

BF224RLRA by Onsemi is a NPN BJT with max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating at 150 °C, it has fT of 850MHz, suitable for RF applications in very high frequency band due to its cylindrical package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 4,867 parts In-Stock

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Northwest PG Solutions

USA . 2,334 parts In-Stock

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Kulean Microsystems

USA . 2,279 parts In-Stock

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Corphita

USA . 1,923 parts In-Stock

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TANS Electronics

Latvia . 1,300 parts In-Stock

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SupplyDigital Components

Austria . 1,253 parts In-Stock

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Native Components

USA . 558 parts In-Stock

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Corohmni

South Africa . 440 parts In-Stock

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UHIMA Technologies

Türkiye . 415 parts In-Stock

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Overview

Upgrade your RF signal processing with the BF224RLRA from Onsemi, a leading manufacturer known for their high-quality components. This NPN bipolar junction transistor is designed for very high-frequency band applications, offering exceptional performance and reliability. With its cylindrical package shape and through-hole terminal form, this transistor is easy to install and ideal for a wide range of electronic projects. Trust Onsemi to deliver the value and benefits you need for your next RF small signal project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits and switching applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic projects.

Package Shape: ROUND

The round shape allows for easier mounting and placement in circuits or circuit boards.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for applications that require high-speed signal processing or communication.

No. of Terminals: 3

Simple design with fewer terminals makes it easier to connect in circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor for space-constrained applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for challenging environments.

Maximum Collector-Emitter Voltage: 30 V

Can handle relatively high voltages, making it versatile for different voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and compatibility with existing technologies.

Maximum Collector Current (IC): 0.05 A

Can handle moderate current levels, suitable for small signal amplification applications.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability, making it easier to connect in circuits during assembly.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in circuit boards.

Nominal Transition Frequency (fT): 850 MHz

High transition frequency enables fast signal switching and amplification, suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF224RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF224RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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