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MPS3640

NXP Semiconductors

MPS3640 by NXP Semiconductors

NXP Semiconductors' MPS3640 is a PNP BJT transistor with 3 terminals, ideal for switching applications in the UHF band. Featuring a max. collector-emitter voltage of 12V, fT of 500MHz, and IC of 0.08A, it offers high performance in a cylindrical package suitable for through-hole mounting.

Median Price

$3.495

Lifecycle Status

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Overview

Looking for a high-quality RF Small Signal Bipolar Junction Transistor? Look no further than the MPS3640 by NXP Semiconductors. With a focus on reliability and performance, NXP Semiconductors is a trusted manufacturer in the industry. The MPS3640 is perfect for switching applications in the ultra-high frequency band, offering customers a durable and efficient solution. Experience the benefits of this PNP transistor with a maximum collector-emitter voltage of 12V and a nominal transition frequency of 500MHz. Upgrade your electronic projects with the MPS3640 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are efficient in switching applications and offer high current gain.

Configuration: SINGLE

Simplifies circuit design as only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance.

Package Shape: ROUND

Compact design that can easily fit into different circuit layouts.

Terminal Form: THROUGH-HOLE

Allows for easy mounting and soldering onto circuit boards.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, providing fast response times.

No. of Terminals: 3

Simplified connectivity with only three terminals to manage.

Package Style (Meter): CYLINDRICAL

Unique cylindrical shape that distinguishes the transistor from other components.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance helps in reducing signal distortion and improving overall performance.

Maximum Collector-Emitter Voltage: 12 V

Can handle high collector-emitter voltages, ensuring reliability in various operating conditions.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its stability and efficiency.

Maximum Collector Current (IC): 0.08 A

Sufficient collector current rating for most small signal applications.

Terminal Position: BOTTOM

Easy to orient and mount in the circuit layout.

Nominal Transition Frequency (fT): 500 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS3640 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3640 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-192-2593, 5961001922593, 5961-00-946-6635, 5961009466635, 5961-14-288-7655, 5961142887655, 5961-01-141-8594, 5961011418594

NIIN

001922593, 009466635, 142887655, 011418594

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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