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MPS3563RLRM

Onsemi

MPS3563RLRM by Onsemi

MPS3563RLRM by Onsemi is an NPN RF BJT with a max fT of 600 MHz. It operates in the ultra-high frequency band, ideal for amplifier applications. With a max IC of 0.05 A and VCE of 12 V, it offers high performance in a cylindrical package suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,502 parts In-Stock

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Vyrian

USA . 740 parts In-Stock

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740

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Problanco Electronics

Mexico . 7,891 parts In-Stock

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7,891

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TANS Electronics

Latvia . 4,472 parts In-Stock

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Kulean Microsystems

USA . 3,134 parts In-Stock

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Corphita

USA . 2,458 parts In-Stock

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UHIMA Technologies

Türkiye . 530 parts In-Stock

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Corohmni

South Africa . 188 parts In-Stock

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SupplyDigital Components

Austria . 163 parts In-Stock

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Overview

Upgrade your RF small signal amplifier with the MPS3563RLRM by Onsemi. Manufactured with precision and quality in mind, this NPN transistor offers ultra-high frequency band capabilities, making it ideal for a wide range of applications. With a maximum operating temperature of 150 °C and a nominal transition frequency of 600 MHz, this transistor delivers top-notch performance and reliability. Enhance your electronic projects with the value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used for amplification and signal processing applications.

Configuration: SINGLE

Simplifies circuit design and integration into systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance.

Package Shape: ROUND

Ensures easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to other components.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-speed data transmission and communication applications.

No. of Terminals: 3

Provides necessary connections for proper functioning.

Package Style (Meter): CYLINDRICAL

Allows for efficient use of space and compact design.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance.

Maximum Collector-Base Capacitance: 1.7 pF

Helps in minimizing signal distortion and maintaining signal integrity.

Maximum Collector-Emitter Voltage: 12 V

Provides a wide range of voltage handling capability.

Transistor Element Material: SILICON

Offers high performance and reliability for electronic circuits.

Maximum Collector Current (IC): 0.05 A

Sufficient current handling capacity for many small signal applications.

Terminal Finish: TIN LEAD

Ensures good solderability and reliable electrical connections.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering on PCBs.

Nominal Transition Frequency (fT): 600 MHz

High frequency capability suitable for many RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS3563RLRM attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3563RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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