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MPS3563

Onsemi

MPS3563 by Onsemi

MPS3563 by Onsemi is an NPN RF BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05A and Ptot of 0.625W, making it suitable for ultra-high frequency amplifier applications. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Rochester

USA . 1,403 parts In-Stock

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$0.053

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$0.044

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$0.039

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DigiKey

USA . 1,403 parts In-Stock

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$0.210

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Digiode

USA . 2,710 parts In-Stock

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Vyrian

USA . 71,139 parts In-Stock

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Component Electronics Inc.

Canada . 100 parts In-Stock

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$0.120

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$0.090

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$0.080

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American Microsemiconductor Inc.

USA . 303 parts In-Stock

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$4.500

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Connector Distribution Corp

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Right Parts Inc.

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ACDS - Activité Composants Distribution Service

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R&J Components

USA . 900 parts In-Stock

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First Choice Components Inc.

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Anansix

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Mil-Aero Solutions, Inc.

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LWI Electronics Inc

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MISTER SPROCKETS

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DF Sales Co.

USA . 45 parts In-Stock

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DF Sales Co.

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Electronics Depot

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LittleDiode

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Electronic Expediters

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Corel Iberica Componentes, S.L.

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Corphita

USA . 732 parts In-Stock

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Corohmni

South Africa . 245 parts In-Stock

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Advanced Electronics

New Zealand . 35 parts In-Stock

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$0.420

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$0.382

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QUARKTWIN TECHNOLOGY LTD

USA . 16,436 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 3,373 parts In-Stock

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Supply Digital

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Perfect Parts

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UHIMA Technologies

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Kulean Microsystems

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TANS Electronics

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Assy Fe

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Overview

Unleash the power of superior performance with the MPS3563 RF Small Signal BJT by Onsemi. Crafted with precision and expertise, this NPN transistor offers unparalleled amplification capabilities in the ultra-high-frequency band. Ideal for applications requiring high-quality signal amplification, this product provides customers with unmatched value and reliability. Elevate your projects to new heights with the MPS3563, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it convenient for assembly and integration.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and easy soldering, ensuring reliable performance in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in various environments and applications.

Nominal Transition Frequency (fT): 1500 MHz

High nominal transition frequency ensures high-speed performance, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS3563 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3563 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-122-8671, 5961001228671, 5960-99-196-2927, 5960991962927

NIIN

001228671, 991962927

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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