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MMBT918LT3

Onsemi

MMBT918LT3 by Onsemi

MMBT918LT3 by Onsemi is an NPN RF BJT with a max fT of 600 MHz. It has a VCEO of 15V and IC of 0.05A, making it suitable for ultra-high frequency applications. With a small outline package and Gull Wing terminals, it is ideal for surface mount designs in the UHF band.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,727 parts In-Stock

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Vyrian

USA . 452 parts In-Stock

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452

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SupplyDigital Components

Austria . 7,059 parts In-Stock

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Problanco Electronics

Mexico . 5,054 parts In-Stock

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Kulean Microsystems

USA . 4,297 parts In-Stock

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TANS Electronics

Latvia . 771 parts In-Stock

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Corphita

USA . 674 parts In-Stock

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UHIMA Technologies

Türkiye . 429 parts In-Stock

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Corohmni

South Africa . 227 parts In-Stock

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Overview

Enhance your RF signal performance with the MMBT918LT3 by Onsemi. With a reputation for top-quality products, Onsemi delivers cutting-edge technology in the RF small signal bipolar junction transistor category. Ideal for ultra-high-frequency applications, this NPN transistor offers a single configuration with gull wing terminals for easy surface mount installation. Say goodbye to signal interference and hello to seamless connectivity with the MMBT918LT3. Experience unparalleled value, benefits, and advantages with this innovative product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good mechanical strength and also helps in reducing the overall cost of the product.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the product easy to use.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape helps in space-efficient PCB layout.

Terminal Form: GULL WING

Gull wing terminal form enables easy soldering and ensures good electrical connection.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ultra high frequency band capability makes this product suitable for high-speed applications.

No. of Terminals: 3

3 terminals provide flexibility in circuit connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance ensures minimal signal distortion at high frequencies.

Maximum Collector-Emitter Voltage: 15 V

15V collector-emitter voltage rating allows for safe operation in various applications.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high temperature tolerance.

Maximum Collector Current (IC): 0.05 A

0.05A collector current rating supports low-power applications efficiently.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances solderability and ensures reliable connections.

Terminal Position: DUAL

Dual terminal position facilitates stable mounting on the PCB.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency of 600MHz enables fast signal processing and amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBT918LT3 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT918LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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