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LM3046MX/NOPB

Texas Instruments

LM3046MX/NOPB by Texas Instruments

LM3046MX/NOPB by Texas Instruments is a NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it suitable for amplifier applications. With a max power dissipation of 0.75W and operating temperature of 85°C, it offers reliable performance in small outline packages.

Median Price

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Lifecycle Status

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9

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1k+

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Chip Stock

USA . 6,820 parts In-Stock

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Vyrian

USA . 6,392 parts In-Stock

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Digiode

USA . 4,699 parts In-Stock

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4,699

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ComSIT Distribution GmbH

Germany . 2,410 parts In-Stock

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ComSIT USA

USA . 2,410 parts In-Stock

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Anansix

USA . 780 parts In-Stock

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780

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Nova Conductors

Japan . 650 parts In-Stock

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650

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ACDS - Activité Composants Distribution Service

France . 427 parts In-Stock

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427

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Lakeview Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 135 parts In-Stock

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$0.334

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135

$0.334

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Parana Technologies

USA . 325 parts In-Stock

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$1.336

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$2.070

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325

$1.336

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$2.070

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DigiPath Technology Company

USA . 2,155 parts In-Stock

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$1.471

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$1.353

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$1.471

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ChromeModa Solutions

Germany . 5,120 parts In-Stock

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$1.501

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$1.231

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$1.501

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IDEA Electronic Components Group

UK . 890 parts In-Stock

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$1.501

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$1.351

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890

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AZTECH Wire

Italy . 226 parts In-Stock

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$7.889

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Semicontronic

India . 1,198 parts In-Stock

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$33.050

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$32.224

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$32.058

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One Stop Electronics

USA . 852 parts In-Stock

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$45.050

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Ampacity Inc.

Singapore . 1,640 parts In-Stock

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$65.050

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Component Stockers USA

USA . 763 parts In-Stock

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Perfect Parts

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Lixinc

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Kepictronics

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Continental Prestige Electronics

USA . 4,820 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Argo Parts USA

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Bastille Electronics

Australia . 63 parts In-Stock

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Overview

Elevate your amplifier designs with the LM3046MX/NOPB by Texas Instruments, a high-quality RF small signal BJT transistor that offers exceptional performance and reliability. Manufactured by a trusted industry leader, this NPN transistor is ideal for applications in the very high-frequency band, providing superior amplification capabilities. With its small outline package and dual terminal position, this transistor delivers maximum power dissipation and nominal transition frequency, ensuring optimal performance in your circuit designs. Upgrade your amplifiers today with the LM3046MX/NOPB and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This lightweight and durable material makes the transistor suitable for various applications.

Polarity or Channel Type:

NPN - NPN transistors are commonly used for amplification and switching applications.

Configuration:

COMPLEX - The complex configuration allows for versatile use in amplifier circuits.

Transistor Application:

AMPLIFIER - Ideal for use in amplifier circuits for signal amplification.

Surface Mount:

YES - The surface mount capability makes it easier to integrate into circuit boards.

Package Shape:

RECTANGULAR - The rectangular shape allows for space-efficient mounting on circuit boards.

Terminal Form:

GULL WING - The gull wing terminals provide a secure connection to the circuit board.

Highest Frequency Band:

VERY HIGH FREQUENCY BAND - Suitable for high-frequency applications such as RF amplifiers.

No. of Elements:

5 - The multiple elements offer enhanced functionality in amplifier circuits.

No. of Terminals:

14 - The numerous terminals provide flexibility in circuit connections.

Maximum Power Dissipation (Abs):

0.75 W - With a high power dissipation capability, the transistor can handle increased power levels.

Package Style (Meter):

SMALL OUTLINE - The small outline package makes it suitable for compact circuit designs.

Minimum DC Current Gain (hFE):

40 - The high minimum DC current gain ensures stable amplification performance.

Maximum Operating Temperature:

85 °C - The high operating temperature range allows for reliable performance in various environments.

Maximum Collector-Emitter Voltage:

15 V - This voltage rating ensures safe operation in different circuits.

Transistor Element Material:

SILICON - Silicon transistors offer high performance and reliability.

Maximum Collector Current (IC):

0.05 A - The high collector current rating allows for various amplifier applications.

Terminal Finish:

MATTE TIN - The matte tin finish provides a reliable and corrosion-resistant terminal surface.

Terminal Position:

DUAL - The dual terminal position offers flexibility in circuit board connection options.

Maximum Time At Peak Reflow Temperature (s):

30 - The short reflow time ensures efficient soldering during assembly.

Peak Reflow Temperature °C:

260 - The peak reflow temperature allows for reliable soldering of the terminals.

Nominal Transition Frequency (fT):

550 MHz - The high transition frequency enables high-frequency signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) LM3046MX/NOPB attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

5

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

LM3046MX/NOPB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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