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BFS17,235

NXP Semiconductors

BFS17,235 by NXP Semiconductors

The NXP Semiconductors BFS17,235 is a RF BJT transistor with NPN polarity and single configuration. It operates in the ultra high frequency band up to 1600 MHz, suitable for amplifier applications. With a max power dissipation of 0.3 W and operating temperature of 150°C, it offers reliable performance in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,534 parts In-Stock

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VNN

France . 4,408 parts In-Stock

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Digiode

USA . 2,353 parts In-Stock

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Anansix

USA . 288 parts In-Stock

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288

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 987 parts In-Stock

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$6.050

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987

$6.050

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AZTECH Wire

Italy . 522 parts In-Stock

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$18.799

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522

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One Stop Electronics

USA . 1,428 parts In-Stock

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$27.050

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Corphita

USA . 4,632 parts In-Stock

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Argo Parts USA

USA . 3,804 parts In-Stock

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Continental Prestige Electronics

USA . 3,496 parts In-Stock

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UNI Independent Distributors

Spain . 195 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Looking for top-notch RF Small Signal Bipolar Junction Transistors (BJT)? Look no further than the BFS17,235 by NXP Semiconductors! With a reputation for high-quality products, NXP delivers reliability and performance. Ideal for amplifier applications in the ultra-high frequency band, this NPN transistor offers a maximum power dissipation of 0.3W, ensuring efficiency and effectiveness. Experience the value and benefits of this product, designed to meet your needs with precision and excellence. Elevate your projects with the BFS17,235 and see the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and resistance to external elements, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifier circuits, making this product suitable for various amplifier applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 15 V

The high maximum collector-emitter voltage rating of 15V makes this transistor suitable for use in high voltage applications.

Maximum Collector Current (IC): 0.025 A

With a maximum collector current of 0.025A, this transistor can handle moderate current loads, making it suitable for many amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS17,235 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS17,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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