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BFR520

NXP Semiconductors

BFR520 by NXP Semiconductors

The NXP Semiconductors BFR520 is a RF Small Signal BJT transistor with NPN polarity, ideal for amplifier applications. It has a max power dissipation of 0.3W, operates in L Band frequency up to 9000MHz, and can handle a max collector current of 0.07A.

Median Price

$0.159

Lifecycle Status

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1k+

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Nova Conductors

Japan . 10 parts In-Stock

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$0.200

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Flip Electronics

USA . 9,000 parts In-Stock

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Chip Stock

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Digiode

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Euro-Tech

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LIBRA Elektronik GmbH

Germany . 3,728 parts In-Stock

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Semi Source

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Resion

USA . 2,943 parts In-Stock

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Anansix

USA . 2,870 parts In-Stock

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Sinequanon

UK . 2,750 parts In-Stock

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Micros

Poland . 2,700 parts In-Stock

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$0.118

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VNN

France . 1,869 parts In-Stock

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PC Components Company LLC

USA . 1,500 parts In-Stock

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Vyrian

USA . 940 parts In-Stock

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Holdelec - ElecDif-Pro

France . 522 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 522 parts In-Stock

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Bristol Electronics

USA . 318 parts In-Stock

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ComSIT Distribution GmbH

Germany . 163 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 12 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 1,000 parts In-Stock

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$0.196

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$0.188

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$0.196

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$0.188

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Argo Parts USA

USA . 2,646 parts In-Stock

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$0.200

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$0.194

2,646

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Continental Prestige Electronics

USA . 881 parts In-Stock

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$0.200

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$0.196

881

$0.200

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Aztec Data Supply Inc.

USA . 2,907 parts In-Stock

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$0.710

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$0.710

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Ampacity Inc.

Singapore . 1,530 parts In-Stock

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$1.050

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Corohmni

South Africa . 169 parts In-Stock

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$1.439

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Semicontronic

India . 393 parts In-Stock

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$5.050

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$4.924

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$4.898

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AZTECH Wire

Italy . 533 parts In-Stock

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$14.201

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One Stop Electronics

USA . 1,648 parts In-Stock

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$50.050

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Component Stockers USA

USA . 531 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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Kepictronics

USA . 5,800 parts In-Stock

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UNI Independent Distributors

Spain . 3,621 parts In-Stock

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Assy Fe

Spain . 3,291 parts In-Stock

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Corphita

USA . 2,671 parts In-Stock

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Lixinc

USA . 2,472 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,628 parts In-Stock

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GreenTree Electronics

Israel . 1,248 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1,248 parts In-Stock

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ChipTracer

USA . 940 parts In-Stock

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Overview

Looking to amplify your RF signals with exceptional quality and reliability? Look no further than the BFR520 by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers top-notch RF Small Signal Bipolar Junction Transistors that are perfect for applications in the L Band frequency range. With a focus on performance and efficiency, this NPN transistor offers customers unmatched value and benefits, making it the ideal choice for all your amplifier needs. Upgrade your electronics with the BFR520 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other applications, making this transistor suitable for a variety of circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into a larger system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimized performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on the PCB and makes it easier to design the layout of the circuit.

Terminal Form: GULL WING

Gull wing terminals facilitate soldering during assembly, ensuring a secure connection to the PCB.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Maximum Power Dissipation (Abs): 0.3 W

The high absolute maximum power dissipation rating indicates the transistor's ability to handle power without overheating.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures sufficient gain in amplifier circuits for proper signal amplification.

Maximum Collector Current (IC): 0.07 A

The high maximum collector current rating allows for handling of larger currents, suitable for various applications.

Nominal Transition Frequency (fT): 9000 MHz

High nominal transition frequency indicates good high-frequency performance, making it suitable for applications requiring fast switching speeds.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR520 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR520 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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