Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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Infineon's BFS483H6327XTSA1 is a NPN BJT transistor with 2 elements, ideal for amplifier applications in L Band frequencies. With a max fT of 8000 MHz and IC of 0.065 A, it features a collector-emitter voltage of 12 V. This small outline package has 6 terminals and matte tin finish.
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Provides good insulation and protection for the transistor, making it suitable for various applications.
NPN transistors are commonly used in amplification circuits and have fast switching speeds, making them ideal for amplifier applications.
Having separate elements allows for better control and flexibility in circuit design.
Specifically designed for amplifying electronic signals, providing high gain and signal strength.
Allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.
Rectangular shape helps in easy placement and arrangement on the circuit board.
Gull wing terminals provide secure and reliable connections to the circuit board.
Suitable for low power applications that require a maximum voltage of 12V.
Allows for handling moderate current levels in amplifier circuits.
High transition frequency allows for efficient signal amplification in high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFS483H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFS483H6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Site Chgs 2/Feb/2023
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Hy Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99-7-F
Multicomp Pro
NC7WZ17P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
1N4148
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
LL4148
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Comchip Technology
Continental Device India
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
Diotec Semiconductor Ag
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14+
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
Telefunken Microelectronics
LM358N
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BFR96
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BFR93AWH6327XTSA1
Infineon Technologies
BFR93AWH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCEO, 0.09A IC, and 6000MHz fT. Ideal for L Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.
BFQ256
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
BFR93AW
Temic Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
LPT16ED
Skyworks Solutions
The Skyworks Solutions LPT16ED is an N-CHANNEL RF BJT with a SINGLE configuration for AMPLIFIER applications. It operates in KU BAND, has 4 terminals, and can handle up to 0.25 W power dissipation. With SILICON GERMANIUM material, it offers a max collector-emitter voltage of 4 V and a max operating temperature of 150 °C.
2N3643
General Diode
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
A5T3571
A5T3571 by Texas Instruments is an NPN BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 20 and a nominal transition frequency of 1200 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. The package style is cylindrical with a plastic/epoxy body material and wire terminals.
MSC82100
STMicroelectronics
STMicroelectronics' MSC82100 is an NPN BJT transistor with a hFE of 15, ideal for amplifier applications in L Band frequencies. With a max operating temp of 200 °C and fT of 1600 MHz, it offers a collector-emitter voltage of 20V and collector current up to 0.2A.
HFA3127RZ
Integrated Device Technology
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
MPS6507ZL1
Onsemi
MPS6507ZL1 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 800MHz. It is commonly used as an amplifier in RF applications due to its low collector-base capacitance of 2.5pF, making it suitable for high-frequency operations.
55GN01CA-TB-E
55GN01CA-TB-E by Onsemi is an NPN BJT transistor with a max fT of 5500 MHz. It has a max IC of 0.07 A and hFE of 100, ideal for amplifier applications in C band frequencies. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for high-frequency RF designs.
MPS918ZL1
MPS918ZL1 by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. It has a fT of 600 MHz and a max collector-emitter voltage of 15V, making it ideal for ultra-high frequency amplifier applications. With a package style of cylindrical and through-hole terminals, it offers high performance in RF circuits.
JAN2N2907AUB
Vpt Components
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BFQ256AT/R
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
2N2222
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Maximum Collector-Emitter Voltage: 30 V;
CPH6020-TL-E
CPH6020-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W and fT of 13GHz. Ideal for high-frequency applications, it has a max operating temp of 150°C and IC of 0.15A, making it suitable for surface mount designs requiring high-speed performance.
START499D
START499D by STMicroelectronics is an NPN RF small signal BJT designed for surface mount applications. It features a max power dissipation of 1.7 W, operates up to 150 °C, and supports a collector current of 1 A. Ideal for compact electronic circuits requiring efficient signal amplification.
KSC1674
The Onsemi KSC1674 is an NPN RF BJT transistor with a max VCEsat of 0.3V and fT of 600MHz, ideal for amplifier applications in the very high frequency band. It has a max IC of 0.02A, hFE of 40, and operates up to 150 °C, housed in a cylindrical package with through-hole terminals.
MSC80185
STMicroelectronics' MSC80185 is an NPN BJT transistor with a min hFE of 15 and fT of 3200 MHz. It operates at a max temperature of 200 °C, suitable for L Band amplification applications. The package style is post/stud mount with a round shape and 4 terminals in a radial position.
CA3086M96
Harris Semiconductor
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 5;
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BFS481H6327XTSA1
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Maximum Collector-Emitter Voltage: 12 V;
BFS460L6
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFS466L6
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;
BFS469L6
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;
BFS480
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .01 A; Maximum Operating Temperature: 150 Cel;
BFS480E6327
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .01 A; Transistor Element Material: SILICON;
BFS481
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; No. of Elements: 2;
BFS481E6327
BFS482
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .035 A; Maximum Collector-Emitter Voltage: 12 V;
BFS483
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .065 A; Transistor Element Material: SILICON;
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