Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFR181WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.02A. Ideal for amplifier circuits due to its small outline package style and high transition frequency.
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Plastic/epoxy package body material provides good insulation, protection, and durability for the transistor, making it suitable for various applications.
NPN polarity allows for easy integration into circuits and enables the transistor to amplify signals effectively.
Single configuration simplifies circuit design and reduces complexity in the overall system.
Designed specifically for amplifier applications, ensuring efficient signal amplification.
Surface mount capability allows for easy and compact PCB assembly, saving space and facilitating mass production.
Operates effectively in the L band frequency range, making it suitable for a wide range of RF applications.
Low collector-base capacitance minimizes crosstalk and interference, ensuring clean signal amplification.
With a maximum collector-emitter voltage of 12V, this transistor can handle a wide range of voltage levels in the circuit.
Silicon transistor element material offers high performance, reliability, and consistency in operation.
Suitable for low current applications, ensuring efficient power consumption and minimal heat dissipation.
Tin terminal finish provides good conductivity and solderability, ensuring reliable connections in the circuit.
Dual terminal position facilitates easy PCB layout and connection, enhancing the overall ease of use.
Compliant with automotive industry standards (AEC-Q101), ensuring high-quality performance and reliability in automotive applications.
High nominal transition frequency enables fast signal switching and amplification, making it suitable for high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFR181WH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFR181WH6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
2N7002
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
BAV99
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138DW-7-F
Diodes Incorporated
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
1N4148WS
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
Microsemi
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MPS3563
MPS3563 by Onsemi is an NPN RF BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05A and Ptot of 0.625W, making it suitable for ultra-high frequency amplifier applications. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
BFU590GX
NXP Semiconductors
The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.
2SC5415AE-TD-E
RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30;
2N3866
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
BFR92AW
Temic Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
BFP840ESDH6327XTSA1
Infineon Technologies
BFP840ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for C Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 80 MHz, it offers high performance in a small outline package.
HFA3127B
Intersil
Intersil's HFA3127B is an NPN BJT transistor with 5 elements, ideal for amplifier applications in the ultra-high frequency band. With a max fT of 8000 MHz and IC of 0.037 A, this transistor features a Gull Wing terminal form and small outline package style for surface mount assembly.
Vishay Telefunken
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Package Style (Meter): SMALL OUTLINE;
BFR92A,235
NXP Semiconductors' BFR92A,235 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications in L Band due to its small outline package and high transition frequency.
MRF559
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .15 A; No. of Terminals: 4;
START450
START450 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies in the C band with a nominal transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
1075MP
Ghz Technology
NPN; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1; Transistor Element Material: SILICON;
MSC80195
STMicroelectronics' MSC80195 is an NPN BJT transistor with a max fT of 3200 MHz. It has a max IC of 0.3A and Pdiss of 4.9W, suitable for L Band amplifier applications due to its high transition frequency and power dissipation capabilities.
BFT25A,215
NXP Semiconductors' BFT25A,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 5000 MHz and hFE of 50, suitable for amplifier applications. The transistor has a max power dissipation of 0.032 W and can handle a collector-emitter voltage of 5V.
BF240
BF240 by Onsemi is a NPN BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 40V, max collector current of 0.025A, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
BFR740L3RHE6327XTSA1
BFR740L3RHE6327XTSA1 by Infineon Technologies is an NPN RF BJT for X Band applications. It has a max fT of 42 GHz, 0.03A IC, and 4V VCE. This single configuration transistor in chip carrier package is ideal for amplifier circuits requiring high frequency operation.
934067694115
RF Small Signal Bipolar Transistors;
2N3570
Texas Instruments
2N3570 by Texas Instruments is a NPN BJT transistor with 4 terminals, 0.05A IC, and 1500MHz fT. Ideal for amplifier applications in the ultra high frequency band, it has a max operating temperature of 175°C and 0.2W power dissipation.
BFM520,115
NXP Semiconductors' BFM520,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with max fT of 9000 MHz. With a max IC of 0.07 A and hFE of 60, it's ideal for high-frequency signal amplification in compact electronic devices.
BFU520XRVL
The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.
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BFR106E6327HTSA1
BFR106E6327HTSA1 by Infineon Technologies is a NPN RF Small Signal BJT transistor with a max power dissipation of 0.7W and a min DC current gain of 70. It is commonly used as an amplifier in applications requiring high frequency performance up to 5000 MHz.
BFR193WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Additional Features: LOW NOISE;
BFR181E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Highest Frequency Band: L BAND;
BFR106,215
NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.
BFR182WH6327XTSA1
BFR182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 8000 MHz fT. It has a max collector-emitter voltage of 12V and 0.035A max collector current. Ideal for amplifier applications in L Band frequencies, it comes in a small outline package with gull wing terminals for surface mount assembly.
BFR182E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
BFR193E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;
BFR193FH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;
BFR193L3E6327XTMA1
BFR193L3E6327XTMA1 by Infineon Technologies is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 70 and a max collector-emitter voltage of 12V, making it suitable for amplifier applications in the L Band frequency range up to 8000 MHz. This surface-mount chip carrier package features no-lead terminals and gold finish, meeting AEC-Q101 standards.
BFR183E6327HTSA1
BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.
BFR106TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
BFR106TRL13
BFR134
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Emitter Voltage: 15 V;
BFR106-T
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
BFR106
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
BFR106T/R
BFR181-E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .175 W; Maximum Collector Current (IC): .02 A;
BFR181E6327BTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;
BFR106E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .1 A;
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