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MCH4017-TL-H

Onsemi

MCH4017-TL-H by Onsemi

MCH4017-TL-H by Onsemi is an NPN RF BJT with 4 terminals, operating at 150°C max. It has a transition frequency of 10GHz, 0.1A collector current, and 12V collector-emitter voltage. Ideal for ultra-high frequency applications due to its small outline package and high power dissipation of 0.45W.

Median Price

$0.135

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 204,000 parts In-Stock

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-

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$0.160

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$0.133

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$0.118

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$0.160

$0.133

$0.118

Verical

USA . 102,000 parts In-Stock

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$0.148

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$0.148

DigiKey

USA . 99,000 parts In-Stock

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$0.110

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$0.110

Flip Electronics (Authorized)

USA . 99,000 parts In-Stock

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Mouser Electronics

USA . 2,377 parts In-Stock

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$0.122

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$0.122

Distributors (In-Stock)

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Vyrian

USA . 2,181 parts In-Stock

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$0.110

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Digiode

USA . 854 parts In-Stock

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$0.124

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$0.124

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Flip Electronics

USA . 99,000 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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$0.110

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113

$0.110

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Corphita

USA . 2,105 parts In-Stock

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$0.118

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Continental Prestige Electronics

USA . 207,000 parts In-Stock

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Kepictronics

USA . 105,000 parts In-Stock

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TANS Electronics

Latvia . 8,198 parts In-Stock

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Kulean Microsystems

USA . 6,639 parts In-Stock

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Problanco Electronics

Mexico . 6,495 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 5,624 parts In-Stock

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UHIMA Technologies

Türkiye . 213 parts In-Stock

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Perfect Parts

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Overview

Unlock the potential of your RF small signal applications with the MCH4017-TL-H by Onsemi. Manufactured with precision and quality in mind, this NPN bipolar junction transistor offers customers unparalleled performance and reliability. Whether you're looking to amplify signals in ultra high frequency bands or enhance your communication systems, this transistor is designed to meet your needs. With a compact package style and maximum power dissipation of 0.45 W, this transistor delivers exceptional value and benefits to your projects. Experience the difference with Onsemi's MCH4017-TL-H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

Common configuration for general-purpose amplification applications, offering versatility in various electronic circuits.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor component for operation, reducing complexity and cost.

Surface Mount: YES

Facilitates easy and efficient integration onto circuit boards, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 0.45 W

Capable of handling power levels up to 0.45 watts without overheating, ensuring stable performance under varying load conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, suitable for demanding industrial and automotive environments.

Nominal Transition Frequency (fT): 10000 MHz

High frequency capability allows for fast switching speeds and efficient amplification of signals in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MCH4017-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.45 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH4017-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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