Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFP182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.035A. Ideal for amplifier circuits due to its high transition frequency and low collector-base capacitance.
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QUARKTWIN TECHNOLOGY LTD
GreenTree Electronics
Perfect Parts
Provides durability and protection, making the transistor suitable for various environments and applications.
NPN transistors are commonly used in amplifiers and switching applications, providing efficient performance.
Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.
Can be easily mounted on circuit boards, saving space and simplifying the manufacturing process.
Suitable for high-frequency applications, ensuring reliable performance in L band frequency ranges.
Low capacitance helps in reducing signal distortion and improving overall transistor performance.
With a high collector-emitter voltage rating, the transistor can handle higher voltages without breakdown.
Capable of handling up to 0.035 A of collector current, making it suitable for low to medium power applications.
High transition frequency allows for faster switching speeds and better overall performance in high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFP182WH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFP182WH6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
DS18B20
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
2N2222A
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AH180-WG-7
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
1N4148
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
Goodwork Semiconductor
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
1N4148WS
Rochester Electronics
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
Synsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM2931AZ-5.0G
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
Nte Electronics
2N2857
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .04 A;
BFR520
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;
934055891115
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Transistor Element Material: SILICON;
MPSH10RLRAG
MPSH10RLRAG by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It has a max IC of 0.1A and Ptot of 0.35W, making it suitable for amplifier applications in the UHF band. The package is cylindrical with through-hole terminals and can operate up to 150°C.
MPSH10G
MPSH10G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max power dissipation of 0.35W and operates in the ultra-high frequency band.
BFU550WF
The NXP Semiconductors BFU550WF is an RF BJT transistor with a max fT of 11GHz. It operates in L Band, has a Vce of 12V, and IC of 0.05A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
HFA3046BZ96
Intersil
HFA3046BZ96 by Intersil is an NPN RF BJT with 5 elements and 14 terminals. It operates in the ultra-high frequency band up to 8V, with a transition frequency of 8000MHz. Ideal for amplifier applications, it has a max operating temperature of 150°C and is surface mountable.
BFT92W,115
NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.
934064589115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 2.8 V;
KSC2223O
KSC2223O by Onsemi is an NPN BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the very high frequency band. It has a min hFE of 60, operates b/w -55 to 150 °C, and can handle a max IC of 0.02A in a small outline package style.
General Diode
MPS918
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;
2N3643
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
BFQ256ATRL
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .3 A; JESD-609 Code: e3;
MMBTH81D87Z
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
KSC1730
The Onsemi KSC1730 is an NPN RF BJT with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 40, max fT of 1100MHz, and can handle a max IC of 0.05A.
MCH4017-TL-H
MCH4017-TL-H by Onsemi is an NPN RF BJT with 4 terminals, operating at 150°C max. It has a transition frequency of 10GHz, 0.1A collector current, and 12V collector-emitter voltage. Ideal for ultra-high frequency applications due to its small outline package and high power dissipation of 0.45W.
TIS111
TIS111 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and max current of 0.8A, ideal for switching applications. With a max power dissipation of 0.36W and transition frequency of 350MHz, it operates at up to 150°C making it suitable for various RF small signal tasks.
FH102A-TR-E
FH102A-TR-E by Onsemi is an NPN RF BJT with 0.5W power dissipation, 90 min hFE, and 5000MHz fT. Ideal for high-frequency applications in electronics, it operates up to 150 °C with a collector current of 0.07A in surface-mount designs.
BFP840FESDH6327XTSA1
Infineon Technologies
BFP840FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with max. collector-emitter voltage of 2.25V and max. collector current of 0.035A, ideal for amplifier applications in KA band frequencies up to 85GHz. This surface-mount transistor has a small outline package with 4 terminals and uses silicon germanium carbon as the element material.
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BFP183E7764HTSA1
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BFP196WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .15 A; Additional Features: LOW NOISE;
BFP193E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;
BFP193WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Terminal Position: DUAL;
BFP196E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BFP182RE7764HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .035 A; Transistor Application: AMPLIFIER;
BFP181W
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .175 W; Maximum Collector Current (IC): .02 A;
BFP182WE6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .035 A;
BFP181WE6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Package Body Material: PLASTIC/EPOXY;
BFP136WE6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .15 A; Moisture Sensitivity Level (MSL): 1;
BFP180W
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .03 W; Maximum Collector Current (IC): .004 A;
BFP182
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A;
BFP182R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .035 A; Terminal Form: GULL WING;
BFP181R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; JESD-30 Code: R-PDSO-G4;
BFP182W
BFP180E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .004 A; Maximum Collector-Emitter Voltage: 8 V;
BFP182E6327
BFP181
BFP182-E6433
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 70; Transistor Element Material: SILICON;
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