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BFP182WH6327XTSA1

Infineon Technologies

BFP182WH6327XTSA1 by Infineon Technologies

BFP182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.035A. Ideal for amplifier circuits due to its high transition frequency and low collector-base capacitance.

Median Price

$0.131

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,836 parts In-Stock

1+ parts

$0.280

100+ parts

$0.136

1k+ parts

$0.123

10k+ parts

$0.111

6,836

$0.280

$0.136

$0.123

$0.111

DigiKey

USA . 7,056 parts In-Stock

1+ parts

$0.330

100+ parts

$0.173

1k+ parts

$0.144

10k+ parts

-

7,056

$0.330

$0.173

$0.144

-

Rochester

USA . 793,161 parts In-Stock

1+ parts

-

100+ parts

$0.131

1k+ parts

$0.109

10k+ parts

$0.097

793,161

-

$0.131

$0.109

$0.097

Verical

USA . 359,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.121

359,440

-

-

-

$0.121

RS (Exports)

UK . 8,990 parts In-Stock

1+ parts

-

100+ parts

$0.208

1k+ parts

$0.113

10k+ parts

-

8,990

-

$0.208

$0.113

-

Chip1Stop

Japan . 8,850 parts In-Stock

1+ parts

-

100+ parts

$0.103

1k+ parts

-

10k+ parts

-

8,850

-

$0.103

-

-

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

6,000

-

-

-

$0.052

Element14

Singapore . 5,840 parts In-Stock

1+ parts

-

100+ parts

$0.250

1k+ parts

$0.070

10k+ parts

$0.070

5,840

-

$0.250

$0.070

$0.070

Farnell

UK . 5,595 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

$0.084

10k+ parts

$0.077

5,595

-

$0.100

$0.084

$0.077

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 909 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

909

$0.070

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.092

-

-

-

Vyrian

USA . 130,206 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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130,206

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-

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-

Chip Stock

USA . 27,600 parts In-Stock

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27,600

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VNN

France . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 130,078 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

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130,078

$0.043

-

-

-

Corphita

USA . 637 parts In-Stock

1+ parts

$0.067

100+ parts

-

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10k+ parts

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637

$0.067

-

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Component Stockers USA

USA . 1,070,516 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

$0.060

1,070,516

$0.080

$0.070

$0.060

$0.060

Argo Parts USA

USA . 4,150 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

$0.089

4,150

$0.092

-

-

$0.089

Continental Prestige Electronics

USA . 5,870 parts In-Stock

1+ parts

$0.464

100+ parts

$0.190

1k+ parts

$0.090

10k+ parts

$0.069

5,870

$0.464

$0.190

$0.090

$0.069

Modulus Dynamics

Lithuania . 8,623 parts In-Stock

1+ parts

$1.940

100+ parts

$1.862

1k+ parts

$1.785

10k+ parts

-

8,623

$1.940

$1.862

$1.785

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QUARKTWIN TECHNOLOGY LTD

USA . 11,488 parts In-Stock

1+ parts

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11,488

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GreenTree Electronics

Israel . 8,746 parts In-Stock

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8,746

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Perfect Parts

USA . 3,153 parts In-Stock

1+ parts

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100+ parts

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3,153

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Overview

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching applications, providing efficient performance.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and simplifying the manufacturing process.

Highest Frequency Band: L BAND

Suitable for high-frequency applications, ensuring reliable performance in L band frequency ranges.

Maximum Collector-Base Capacitance: 0.5 pF

Low capacitance helps in reducing signal distortion and improving overall transistor performance.

Maximum Collector-Emitter Voltage: 12 V

With a high collector-emitter voltage rating, the transistor can handle higher voltages without breakdown.

Maximum Collector Current (IC): 0.035 A

Capable of handling up to 0.035 A of collector current, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 8000 MHz

High transition frequency allows for faster switching speeds and better overall performance in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP182WH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP182WH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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