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BFP193E6327HTSA1

Infineon Technologies

BFP193E6327HTSA1 by Infineon Technologies

BFP193E6327HTSA1 by Infineon is an NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 8000 MHz and can handle a collector-emitter voltage of 12V. Ideal for ultra-high frequency amplification applications due to its small outline package and high power dissipation capability.

Median Price

$0.158

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 10 parts In-Stock

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$0.267

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$0.267

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Distrelec

Netherlands . 2,925 parts In-Stock

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$0.327

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$0.294

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$0.240

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2,925

$0.327

$0.294

$0.240

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Chip1Stop

Japan . 4,180 parts In-Stock

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$0.067

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$0.067

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RS (Exports)

UK . 2,450 parts In-Stock

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$0.292

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$0.184

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$0.131

2,450

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$0.292

$0.184

$0.131

Rochester

USA . 1,760 parts In-Stock

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-

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$0.133

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$0.110

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$0.098

1,760

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$0.133

$0.110

$0.098

Verical

USA . 1,030 parts In-Stock

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$0.131

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$0.126

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$0.119

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-

$0.131

$0.126

$0.119

Farnell

UK . 332 parts In-Stock

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$0.158

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$0.105

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$0.102

332

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$0.158

$0.105

$0.102

Element14

Singapore . 332 parts In-Stock

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$0.157

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$0.108

10k+ parts

$0.105

332

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$0.157

$0.108

$0.105

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 162 parts In-Stock

1+ parts

$0.068

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$0.068

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Nova Conductors

Japan . 56 parts In-Stock

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$0.133

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IBS Electronics

USA . 6,000 parts In-Stock

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$0.104

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$0.104

VNN

France . 5,376 parts In-Stock

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Vyrian

USA . 3,179 parts In-Stock

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Euro-Tech

UK . 3,000 parts In-Stock

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TME

Poland . 350 parts In-Stock

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$0.154

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Bristol Electronics

USA . 325 parts In-Stock

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Ampacity Inc.

Singapore . 3,711 parts In-Stock

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$0.060

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$0.060

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Semicontronic

India . 3,400 parts In-Stock

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$0.060

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$0.058

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$0.058

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$0.060

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$0.058

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Corphita

USA . 409 parts In-Stock

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$0.065

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409

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Argo Parts USA

USA . 2,645 parts In-Stock

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$0.133

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$0.129

2,645

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Netroflash

USA . 50 parts In-Stock

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$0.133

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$0.126

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$0.124

50

$0.133

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$0.126

$0.124

Continental Prestige Electronics

USA . 1,692 parts In-Stock

1+ parts

$0.408

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$0.179

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$0.112

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$0.083

1,692

$0.408

$0.179

$0.112

$0.083

Aztec Data Supply Inc.

USA . 85 parts In-Stock

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$0.825

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$0.825

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Corohmni

South Africa . 127 parts In-Stock

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$1.680

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$1.680

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Modulus Dynamics

Lithuania . 612 parts In-Stock

1+ parts

$1.754

100+ parts

$1.684

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$1.614

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612

$1.754

$1.684

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Perfect Parts

USA . 35,605 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the BFP193E6327HTSA1 by Infineon Technologies. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in amplifier applications within the ultra high frequency band. With a focus on quality and innovation, Infineon Technologies presents a product that exceeds expectations, delivering reliability and efficiency. Elevate your projects to new heights with the BFP193E6327HTSA1 - where value meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used in amplifiers and other electronic circuits, offering reliability and stability.

Configuration: SINGLE

Simplified design and easy to use in various circuit configurations.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance in audio and RF applications.

Surface Mount: YES

Easy to mount on PCBs, saving space and facilitating automated assembly processes.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications such as RF and microwave circuits, offering excellent performance in such bands.

Maximum Power Dissipation (Abs): 0.58 W

Capable of handling relatively high power levels, making it versatile for various applications.

Minimum DC Current Gain (hFE): 70

Ensures consistent gain and performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Nominal Transition Frequency (fT): 8000 MHz

High transition frequency enables efficient amplification at high frequencies, ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP193E6327HTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP193E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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