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BFP196E6327HTSA1

Infineon Technologies

BFP196E6327HTSA1 by Infineon Technologies

BFP196E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating up to 150°C. It has a max fT of 7500 MHz and collector-emitter voltage of 12V, making it ideal for L Band amplifier applications. The package is surface mountable with Gull Wing terminals in a small outline rectangular shape.

Median Price

$0.133

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Arrow

USA . 2,389 parts In-Stock

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$0.101

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$0.053

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$0.036

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2,389

$0.101

$0.053

$0.036

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Newark

USA . 6,440 parts In-Stock

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$0.329

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$0.169

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$0.140

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6,440

$0.329

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$0.140

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Mouser Electronics

USA . 654 parts In-Stock

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$0.350

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$0.165

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$0.150

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$0.118

654

$0.350

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$0.118

Rochester

USA . 114,416 parts In-Stock

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$0.133

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$0.110

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$0.098

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$0.110

$0.098

Verical

USA . 51,930 parts In-Stock

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$0.123

RS (Exports)

UK . 11,925 parts In-Stock

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$0.297

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$0.179

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$0.134

11,925

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$0.297

$0.179

$0.134

Farnell

UK . 9,840 parts In-Stock

1+ parts

-

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$0.115

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$0.104

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$0.097

9,840

-

$0.115

$0.104

$0.097

Element14

Singapore . 9,840 parts In-Stock

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$0.140

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Chip1Stop

Japan . 9,250 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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$0.083

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$0.083

Distrelec

Netherlands . 3,000 parts In-Stock

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Digiode

USA . 500 parts In-Stock

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$0.033

100+ parts

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500

$0.033

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Nova Conductors

Japan . 10 parts In-Stock

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$0.097

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10

$0.097

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NAC Semi

USA . 174,000 parts In-Stock

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$0.280

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Vyrian

USA . 19,674 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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VNN

France . 2,241 parts In-Stock

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Semicontronic

India . 20,180 parts In-Stock

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$0.030

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Corphita

USA . 349 parts In-Stock

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$0.032

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349

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Ampacity Inc.

Singapore . 20,349 parts In-Stock

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$0.065

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Argo Parts USA

USA . 487 parts In-Stock

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$0.097

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$0.094

487

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$0.094

Netroflash

USA . 50 parts In-Stock

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$0.097

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$0.092

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$0.090

50

$0.097

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$0.090

Component Stockers USA

USA . 10,431 parts In-Stock

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$0.260

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$0.090

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$0.080

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10,431

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Continental Prestige Electronics

USA . 10,974 parts In-Stock

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$0.340

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$0.142

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$0.087

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$0.065

10,974

$0.340

$0.142

$0.087

$0.065

Modulus Dynamics

Lithuania . 23,178 parts In-Stock

1+ parts

$0.793

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$0.761

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$0.730

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23,178

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Corohmni

South Africa . 984 parts In-Stock

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Aztec Data Supply Inc.

USA . 259 parts In-Stock

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$1.086

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GreenTree Electronics

Israel . 11,888 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Unlock the potential of your RF applications with the BFP196E6327HTSA1 by Infineon Technologies. With a reputation for quality and innovation, Infineon delivers superior performance in the field of RF Small Signal Bipolar Junction Transistors (BJT). Perfect for amplifiers in the L Band frequency range, this NPN transistor offers high reliability and efficiency in a compact, surface-mount package. Upgrade your designs with Infineon's BFP196E6327HTSA1 and experience unparalleled value and benefits that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into amplifier circuits for signal processing.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability increases efficiency in manufacturing processes and allows for compact circuit designs.

Maximum Collector-Base Capacitance: 1.4 pF

Low collector-base capacitance helps in reducing signal distortion and improving high-frequency performance.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance in various operating conditions.

Nominal Transition Frequency (fT): 7500 MHz

High transition frequency ensures high-speed operation and excellent signal processing capabilities.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP196E6327HTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.4 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP196E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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