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BFR520,215

NXP Semiconductors

BFR520,215 by NXP Semiconductors

NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.

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6

In-Stock Inventory

1k+

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Vyrian

USA . 7,323 parts In-Stock

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Digiode

USA . 3,125 parts In-Stock

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Anansix

USA . 2,160 parts In-Stock

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VNN

France . 699 parts In-Stock

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699

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Prism Electronics

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Aztec Data Supply Inc.

USA . 110 parts In-Stock

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$0.974

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Corohmni

South Africa . 140 parts In-Stock

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$1.026

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One Stop Electronics

USA . 572 parts In-Stock

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$9.050

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AZTECH Wire

Italy . 455 parts In-Stock

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Ampacity Inc.

Singapore . 501 parts In-Stock

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$37.050

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Semicontronic

India . 402 parts In-Stock

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$48.548

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UNI Independent Distributors

Spain . 6,979 parts In-Stock

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Argo Parts USA

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Corphita

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Microchip USA

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Bastille Electronics

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Overview

Upgrade your RF small signal amplifier with the BFR520,215 from NXP Semiconductors. Designed for high performance in L band applications, this NPN transistor offers a compact design and excellent power dissipation capabilities. With a minimum DC current gain of 60 and a nominal transition frequency of 9000 MHz, this transistor ensures top-notch quality and reliability. Experience seamless integration with its surface mount capability and gull wing terminal form, making installation a breeze. Trust NXP Semiconductors to deliver cutting-edge technology that meets your amplifier needs with the BFR520,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit designs and makes the product easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

The surface-mount capability makes it easier to integrate the transistor into compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide reliable connectivity and facilitate soldering during assembly.

Highest Frequency Band: L BAND

Operates efficiently in the L band frequency range, suitable for various high-frequency applications.

No. of Terminals: 3

The 3-terminal configuration simplifies circuit connections and reduces complexity in designs.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, the transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes the product suitable for compact electronic devices.

Maximum Power Dissipation Ambient: 0.3 W

Can dissipate up to 0.3W of power in ambient conditions, ensuring reliable performance under varying temperatures.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 175 °C

Capable of operating at temperatures up to 175°C, suitable for high-temperature environments.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, making the transistor a durable choice for various applications.

Maximum Collector Current (IC): 0.07 A

Capable of handling a maximum collector current of 0.07A, suitable for applications requiring moderate current levels.

Terminal Finish: TIN

Tin terminal finish ensures good connectivity and solderability, enhancing the reliability of the product.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connections in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260°C, ensuring reliable soldering during assembly processes.

Reference Standard: CECC

Complies with CECC standards, ensuring quality and performance consistency.

Nominal Transition Frequency (fT): 9000 MHz

With a nominal transition frequency of 9000 MHz, the transistor can handle high-frequency signals efficiently.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR520,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR520,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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