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SS9018E

Onsemi

SS9018E by Onsemi

SS9018E by Onsemi is a NPN BJT transistor for RF applications. With max VCEsat of 0.5V, it operates at 1100MHz fT and handles up to 0.05A IC. Ideal for amplifier circuits in L Band frequencies with a max temp of 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,445 parts In-Stock

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Digiode

USA . 887 parts In-Stock

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SupplyDigital Components

Austria . 7,199 parts In-Stock

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TANS Electronics

Latvia . 5,462 parts In-Stock

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Kulean Microsystems

USA . 2,692 parts In-Stock

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Supply Digital

USA . 2,396 parts In-Stock

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Corphita

USA . 1,326 parts In-Stock

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Problanco Electronics

Mexico . 958 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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Overview

Unleash the power of high-quality RF Small Signal Bipolar Junction Transistors with the SS9018E by Onsemi. Designed for amplification in the L Band, this NPN transistor offers unmatched performance and reliability. With a maximum VCEsat of 0.5V and a minimum DC current gain of 39, this transistor is perfect for a wide range of applications. Trust in Onsemi's expertise and innovation to deliver the best value and benefits to meet your amplifier needs. Elevate your projects with the SS9018E and experience the difference of top-tier quality and superior functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes.

Maximum VCEsat: 0.5 V

Low VCEsat helps in reducing power dissipation and improving efficiency.

Highest Frequency Band: L BAND

Suitable for applications in the L band frequency range.

Minimum DC Current Gain (hFE): 39

Provides good amplification capability.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 15 V

Sufficient voltage rating for many small signal applications.

Nominal Transition Frequency (fT): 1100 MHz

High transition frequency allows for use in high-frequency circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

39

Highest Frequency Band:

L BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

SS9018E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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