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SS9018D

Onsemi

SS9018D by Onsemi

SS9018D by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 28, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.

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2

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1k+

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Digiode

USA . 3,314 parts In-Stock

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Vyrian

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Kepictronics

USA . 150,000 parts In-Stock

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Kulean Microsystems

USA . 7,142 parts In-Stock

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SupplyDigital Components

Austria . 3,428 parts In-Stock

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Corphita

USA . 2,842 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 588 parts In-Stock

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TANS Electronics

Latvia . 485 parts In-Stock

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Corohmni

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Overview

Looking to amplify your signal with top-notch quality? Look no further than the SS9018D by Onsemi. With a reputation for excellence, Onsemi delivers reliable RF Small Signal Bipolar Junction Transistors that excel in amplifier applications in the L Band frequency range. The NPN configuration and high DC current gain ensure optimal performance, while the low VCEsat and maximum power dissipation add value by maximizing efficiency. Trust Onsemi to provide the perfect solution for your amplification needs with the SS9018D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single configuration, making it easy to implement in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier use, ensuring reliable performance in amplification tasks.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing energy loss and improving efficiency in amplifier circuits.

Terminal Form: THROUGH-HOLE

Allows for easy and secure installation on PCBs or breadboards.

Highest Frequency Band: L BAND

Suitable for applications in the L band frequency range, offering versatility in RF signal amplification.

Maximum Power Dissipation (Abs): 0.4 W

Can handle high power dissipation levels, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 15 V

Withstands high collector-emitter voltage levels, ensuring reliability in various amplifier circuits.

Nominal Transition Frequency (fT): 1100 MHz

High transition frequency allows for efficient amplification of high-frequency signals, making it suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018D attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

28

Highest Frequency Band:

L BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

SS9018D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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