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CPH6021

Onsemi

CPH6021 by Onsemi

CPH6021 by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the ultra-high frequency band with a max fT of 10,000 MHz. With a max IC of 0.1 A and hFE of 60, it has a package style of small outline and can handle up to 0.7 W power dissipation at 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 899 parts In-Stock

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Digiode

USA . 568 parts In-Stock

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Native Components

USA . 853 parts In-Stock

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$13.360

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$13.360

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Northwest PG Solutions

USA . 1,745 parts In-Stock

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$14.696

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$13.226

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Kulean Microsystems

USA . 6,984 parts In-Stock

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Problanco Electronics

Mexico . 6,007 parts In-Stock

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SupplyDigital Components

Austria . 5,705 parts In-Stock

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TANS Electronics

Latvia . 690 parts In-Stock

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Corphita

USA . 246 parts In-Stock

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Corohmni

South Africa . 203 parts In-Stock

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UHIMA Technologies

Türkiye . 3 parts In-Stock

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Overview

Unleash the power of innovation with the CPH6021 by Onsemi. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor offers unparalleled quality and performance. Whether you're amplifying signals or diving into the ultra-high frequency band, this transistor is your ultimate ally. With a maximum collector-emitter voltage of 12V and a nominal transition frequency of 10000 MHz, the possibilities are endless. Elevate your projects to new heights with the CPH6021 - where excellence meets efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuit designs and offers a simple setup.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and facilitates easy placement on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide a secure connection and are suitable for surface mounting.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra high frequency applications, ensuring high-speed performance.

No. of Terminals: 6

Having 6 terminals allows for more connection options and flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.7 W

With a maximum power dissipation of 0.7W, this transistor can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is ideal for compact electronic designs.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can perform reliably even in high-temperature environments.

Maximum Collector-Emitter Voltage: 12 V

Capable of handling voltages up to 12V, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels.

Terminal Position: DUAL

Dual terminal position allows for easier connection and integration into circuit designs.

Nominal Transition Frequency (fT): 10000 MHz

High nominal transition frequency of 10000MHz enables fast switching and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CPH6021 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH6021 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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