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CPH6021-TL-H

Onsemi

CPH6021-TL-H by Onsemi

CPH6021-TL-H by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.

Median Price

$0.181

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 107,980 parts In-Stock

1+ parts

-

100+ parts

$0.195

1k+ parts

$0.162

10k+ parts

$0.144

107,980

-

$0.195

$0.162

$0.144

Verical

USA . 105,000 parts In-Stock

1+ parts

-

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$0.181

105,000

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-

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$0.181

DigiKey

USA . 96,000 parts In-Stock

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$0.110

96,000

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$0.110

Flip Electronics (Authorized)

USA . 96,000 parts In-Stock

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96,000

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Distributors (In-Stock)

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Digiode

USA . 1,871 parts In-Stock

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$0.160

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1,871

$0.160

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Vyrian

USA . 1,121 parts In-Stock

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$0.168

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1,121

$0.168

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Bristol Electronics

USA . 2,493 parts In-Stock

1+ parts

$0.750

100+ parts

$0.375

1k+ parts

$0.150

10k+ parts

-

2,493

$0.750

$0.375

$0.150

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Flip Electronics

USA . 96,000 parts In-Stock

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96,000

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DigiKey Marketplace

USA . 96,000 parts In-Stock

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96,000

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Dan-Mar Components

USA . 2,493 parts In-Stock

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2,493

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Distributors (Availability)

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Corphita

USA . 750 parts In-Stock

1+ parts

$0.151

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750

$0.151

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Corohmni

South Africa . 231 parts In-Stock

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$0.168

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231

$0.168

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Continental Prestige Electronics

USA . 107,980 parts In-Stock

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$0.141

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107,980

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$0.141

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,327 parts In-Stock

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26,327

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Problanco Electronics

Mexico . 6,085 parts In-Stock

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6,085

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SupplyDigital Components

Austria . 5,193 parts In-Stock

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Kulean Microsystems

USA . 3,759 parts In-Stock

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3,759

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TANS Electronics

Latvia . 2,834 parts In-Stock

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2,834

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Northwest PG Solutions

USA . 2,178 parts In-Stock

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$4.807

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2,178

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$4.807

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Native Components

USA . 180 parts In-Stock

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$4.758

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180

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$4.758

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UHIMA Technologies

Türkiye . 84 parts In-Stock

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84

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Overview

Upgrade your RF signal amplification with the CPH6021-TL-H by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality RF Small Signal Bipolar Junction Transistors, like the CPH6021-TL-H, that offer exceptional performance and reliability. Whether you're looking to enhance communication systems, radar technology, or wireless devices, this NPN transistor provides superior power dissipation and high transition frequency to meet your needs. Trust Onsemi for cutting-edge technology and elevate your projects with the CPH6021-TL-H.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications due to their high input impedance.

Configuration: SINGLE

SINGLE configuration makes the transistor easy to use and integrate into circuits.

Surface Mount: YES

Surface mount technology allows for high-density mounting and saves space on the circuit board.

Maximum Power Dissipation (Abs): 0.7 W

High power dissipation capability allows the transistor to handle higher loads.

Minimum DC Current Gain (hFE): 60

A high DC current gain ensures efficient amplification of signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperature environments.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows for the transistor to handle moderate current loads.

Terminal Finish: TIN BISMUTH

TIN BISMUTH terminal finish provides good solderability and reliability in assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperatures for up to 30 seconds, allowing for proper soldering during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliability during assembly processes.

Nominal Transition Frequency (fT): 8000 MHz

The high nominal transition frequency of 8000 MHz indicates that the transistor is suitable for high-frequency applications such as RF signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CPH6021-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

CPH6021-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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