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CPH6074

Onsemi

CPH6074 by Onsemi

CPH6074 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band up to 1200 MHz, with a max collector-emitter voltage of 15V and power dissipation of 0.5W. The package is a small outline with Gull Wing terminals, making it ideal for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,863 parts In-Stock

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Vyrian

USA . 912 parts In-Stock

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Native Components

USA . 558 parts In-Stock

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$0.408

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$0.392

558

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$0.392

Northwest PG Solutions

USA . 1,608 parts In-Stock

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$0.449

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$0.396

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$0.449

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$0.396

Problanco Electronics

Mexico . 2,037 parts In-Stock

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2,037

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SupplyDigital Components

Austria . 1,720 parts In-Stock

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Corphita

USA . 1,422 parts In-Stock

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TANS Electronics

Latvia . 1,072 parts In-Stock

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Kulean Microsystems

USA . 874 parts In-Stock

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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Corohmni

South Africa . 423 parts In-Stock

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Overview

Experience the unmatched quality and reliability of the CPH6074 by Onsemi, a leading manufacturer in the industry. As part of the RF Small Signal Bipolar Junction Transistors category, this PNP transistor offers exceptional performance and versatility in amplifier applications. With a maximum operating temperature of 150 °C and a very high frequency band, this transistor is designed to meet your most demanding requirements. Trust in the value and benefits that Onsemi brings to the table with the CPH6074, delivering superior results for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good electrical insulation and physical protection, making the transistor durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate, 2 elements allows for increased versatility in circuit design and potential applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability makes installation and assembly easier and more convenient, especially for compact or densely populated PCBs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures and operate reliably in various environments.

Nominal Transition Frequency (fT): 1200 MHz

High nominal transition frequency of 1200 MHz indicates high-speed performance, making this transistor suitable for applications requiring fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CPH6074 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH6074 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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