Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Fairchild Semiconductor's PN5179D26Z is an NPN BJT transistor with a max collector-emitter voltage of 12V and a transition frequency of 900MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max power dissipation of 0.6W. The package style is cylindrical with a matte tin terminal finish, suitable for through-hole mounting at temperatures up to 150°C.
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The plastic/epoxy material provides a low-cost and lightweight solution for the transistor package, making it suitable for a wide range of applications.
NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for various circuit designs.
The single configuration simplifies circuit design and integration, making it easier to work with in projects.
Designed specifically for amplifier applications, this transistor provides reliable signal amplification with low distortion.
The round package shape allows for easy mounting and placement in circuit boards, simplifying the assembly process.
The through-hole terminals provide secure connections and easier soldering during assembly, ensuring a reliable electrical connection.
With a high frequency band, this transistor is suitable for ultra-high frequency applications where fast signal processing is required.
The high maximum power dissipation allows for the transistor to handle higher power levels without overheating, ensuring long-term reliability.
The cylindrical package style provides a compact and space-saving design, making it ideal for applications where size is a constraint.
The high maximum operating temperature allows the transistor to operate efficiently in a wide range of environments, enhancing its reliability and performance.
The low collector-base capacitance minimizes signal losses and distortion, ensuring high-frequency performance in amplifier applications.
With a high collector-emitter voltage rating, this transistor can handle higher voltage levels without breakdown, making it suitable for diverse applications.
Silicon transistors offer high performance, low noise, and good thermal stability, making them a reliable choice for amplifier circuits.
The high maximum collector current rating allows the transistor to handle higher current levels, making it suitable for applications that require high current amplification.
The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.
The bottom terminal position makes it easier to mount the transistor on a PCB and connect it to other components, simplifying the assembly process.
With a high nominal transition frequency, this transistor can efficiently amplify signals up to 900 MHz, making it suitable for high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) PN5179D26Z attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
PN5179D26Z Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
1N4148WS
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Vishay Sprague
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
2N2222A
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Good-ark Electronics
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
Secos
Kec
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
International Semiconductor
New Jersey Semiconductor Products
Central Semiconductor
BFP193E6327HTSA1
Infineon Technologies
BFP193E6327HTSA1 by Infineon is an NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 8000 MHz and can handle a collector-emitter voltage of 12V. Ideal for ultra-high frequency amplification applications due to its small outline package and high power dissipation capability.
AT-32032-TR1G
Broadcom
Broadcom's AT-32032-TR1G is an NPN BJT transistor with a max power dissipation of 0.2W and a min DC current gain of 70. It is designed for S Band applications, featuring a small outline package shape and Gull Wing terminal form for surface mount assembly.
MSD2714AT1G
The Onsemi MSD2714AT1G is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is ideal for UHF applications due to its small outline package and high transition frequency. With a DC current gain of 90, it offers efficient performance in ultra-high frequency band circuits.
LM3146N
Rochester Electronics
NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;
SS9018D
SS9018D by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 28, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
TIS129
Texas Instruments
TIS129 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 800MHz. Ideal for amplifier applications, it has a max power dissipation of 0.25W and operates in the ultra-high frequency band. The package is cylindrical with wire terminals at the bottom.
BFR92ALT1
National Semiconductor
BFR92ALT1 by National Semiconductor is an NPN RF BJT with a max power dissipation of 0.273W, min hFE of 40, and max IC of 0.025A. It's used in surface mount applications for its silicon element material and tin/lead terminal finish.
BFR740L3RHE6327XTSA1
BFR740L3RHE6327XTSA1 by Infineon Technologies is an NPN RF BJT for X Band applications. It has a max fT of 42 GHz, 0.03A IC, and 4V VCE. This single configuration transistor in chip carrier package is ideal for amplifier circuits requiring high frequency operation.
BFS17PE6327HTSA1
Infineon's BFS17PE6327HTSA1 is an NPN RF BJT for amplifiers in the UHF band. With a max fT of 2500 MHz, it has a hFE of 40 and can handle up to 15V VCE. The transistor comes in a small outline package with gull wing terminals, making it suitable for high-frequency applications.
MMBTH10LT1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
934067702215
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
2SC5226A-4-TL-E
Sanyo Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .07 A; Package Body Material: PLASTIC/EPOXY;
START450
STMicroelectronics
START450 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies in the C band with a nominal transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
BFS17PE6433
Siemens
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;
MMBT918
MMBT918 by Onsemi is a NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and hFE of 20, ideal for amplifier applications in the VHF band. This small outline package with gull wing terminals operates up to 150 °C, making it suitable for high-frequency amplification needs.
BFR93AW
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;
MMBTH10
Lite-on Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;
BFP620FE7764
BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.
BFP420FH6327XTSA1
BFP420FH6327XTSA1 by Infineon is a NPN RF BJT with 4.5V VCEO, 0.06A IC, and 25GHz fT. Ideal for C Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.
BFU520XRVL
The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.
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PN5179/D26Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE;
PN5179
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .025 A;
PN5179/D10Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Terminal Form: THROUGH-HOLE; Transistor Application: AMPLIFIER;
PN5179/D28Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector-Base Capacitance: 1 pF; Maximum VCEsat: .4 V;
PN5179/D29Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Qualification: Not Qualified; Maximum Collector-Base Capacitance: 1 pF;
PN5179/D74Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum VCEsat: .4 V; No. of Terminals: 3;
PN5179/D26Z-18
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Minimum Power Gain (Gp): 15 dB; Package Shape: ROUND;
PN5179/D75Z-18
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Minimum DC Current Gain (hFE): 25; Terminal Form: THROUGH-HOLE;
PN5179/D11Z-5
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; JESD-30 Code: O-PBCY-T3; Transistor Application: AMPLIFIER;
PN5179/D27Z-5
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector-Base Capacitance: 1 pF; Maximum Collector-Emitter Voltage: 12 V;
PN5179/D29Z-5
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Minimum DC Current Gain (hFE): 25; Qualification: Not Qualified;
PN5179/D89Z-5
PN5179/D26Z-J61Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; No. of Terminals: 3; Transistor Application: AMPLIFIER;
PN5179/D28Z-J61Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Minimum Power Gain (Gp): 15 dB; Terminal Form: THROUGH-HOLE;
PN5179/D11Z-J14Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Package Shape: ROUND; No. of Terminals: 3;
PN5179/D10Z-J22Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector-Base Capacitance: 1 pF; No. of Terminals: 3;
PN5179/D26Z-J22Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Minimum DC Current Gain (hFE): 25; Minimum Power Gain (Gp): 15 dB;
PN5179/D29Z-J22Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Minimum DC Current Gain (hFE): 25; Package Shape: ROUND;
PN5179/D10Z-J25Z
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum VCEsat: .4 V; JESD-30 Code: O-PBCY-T3;
PN5179/D11Z-J25Z
Fairchild Semiconductor
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