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MPS5179RL1

Onsemi

MPS5179RL1 by Onsemi

MPS5179RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 900MHz. It is commonly used in amplifier applications due to its very high-frequency band capabilities. The transistor has a single configuration, cylindrical package style, and through-hole terminal form for easy integration.

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1k+

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Vyrian

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Digiode

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Kulean Microsystems

USA . 7,240 parts In-Stock

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Problanco Electronics

Mexico . 3,517 parts In-Stock

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SupplyDigital Components

Austria . 3,498 parts In-Stock

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Corphita

USA . 2,061 parts In-Stock

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TANS Electronics

Latvia . 1,402 parts In-Stock

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UHIMA Technologies

Türkiye . 259 parts In-Stock

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Corohmni

South Africa . 75 parts In-Stock

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Overview

Amplify your signals with the MPS5179RL1 by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this NPN transistor is ideal for amplifier applications in the very high-frequency band. Its cylindrical package body material ensures durability while its through-hole terminals make installation a breeze. Experience the value and benefits of superior signal amplification with the MPS5179RL1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, allowing for easy handling and long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular layouts, providing flexibility in circuit design.

Terminal Form: THROUGH-HOLE

The through-hole terminals are easy to solder onto a circuit board, providing a secure and reliable connection for the transistor.

No. of Terminals: 3

With 3 terminals, this transistor can be easily integrated into various circuit designs with different connection requirements.

Maximum Collector-Base Capacitance: 1 pF

The low collector-base capacitance minimizes signal distortion and improves the overall performance of the transistor in high-frequency applications.

Maximum Collector-Emitter Voltage: 12 V

The 12V collector-emitter voltage rating allows for efficient operation in low-voltage applications, providing stability and reliability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring consistent operation over a wide range of temperatures and conditions.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05A allows for efficient amplification of signals without overloading the transistor, ensuring reliable performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a reliable and secure connection, ensuring proper functionality and long-term durability.

Terminal Position: BOTTOM

The bottom terminal position simplifies assembly and mounting, making it easy to integrate the transistor into various circuit layouts.

Nominal Transition Frequency (fT): 900 MHz

With a high nominal transition frequency of 900MHz, this transistor is suitable for very high-frequency applications, providing excellent signal amplification capabilities.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS5179RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS5179RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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