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MPS5179

Onsemi

MPS5179 by Onsemi

MPS5179 by Onsemi is a NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and operates up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 12V.

Median Price

$1.901

Lifecycle Status

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23

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1k+

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Master Electronics

USA . 174 parts In-Stock

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$3.710

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$1.300

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$0.510

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174

$3.710

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Rochester

USA . 674 parts In-Stock

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$0.092

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$0.077

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$0.068

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$0.092

$0.077

$0.068

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Digiode

USA . 1,783 parts In-Stock

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$0.072

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American Microsemiconductor Inc.

USA . 12 parts In-Stock

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$3.530

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Vyrian

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Anansix

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Resion

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Component Electronics Inc.

Canada . 1,615 parts In-Stock

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Diverse Electronics

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Atlantic Semiconductor

USA . 1,215 parts In-Stock

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Bristol Electronics

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Electronic Expediters

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J & M Industries LLC

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Sunrise Surplus Inc.

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ECAB

Sweden . 31 parts In-Stock

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Semi Source

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Tech-Mark Corp

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Electronics Depot

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LittleDiode

UK . 3 parts In-Stock

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Mentor Electronics Marketing, LLC

USA . 3 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Corphita

USA . 1,151 parts In-Stock

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$0.068

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Corohmni

South Africa . 141 parts In-Stock

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$0.076

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Modulus Dynamics

Lithuania . 100 parts In-Stock

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$0.944

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$0.944

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$0.944

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,601 parts In-Stock

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SupplyDigital Components

Austria . 6,156 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 4,960 parts In-Stock

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Kulean Microsystems

USA . 3,596 parts In-Stock

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TANS Electronics

Latvia . 3,007 parts In-Stock

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Supply Digital

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A-Z Elektronik GmbH

Germany . 1,544 parts In-Stock

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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Overview

Enhance your RF signal amplification with the MPS5179 by Onsemi. Crafted with precision and expertise, this NPN transistor offers high performance in a compact package, perfect for applications in very high frequency bands. From enhancing audio signals to boosting radio frequencies, this transistor is a versatile solution for all your amplifier needs. Trust in the quality and reliability of Onsemi to deliver superior products that provide exceptional value and benefits to customers. Amp up your electronics with the MPS5179 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits.

Configuration: SINGLE

Simplified design for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications.

Package Shape: ROUND

Allows for easy mounting and installation.

Terminal Form: THROUGH-HOLE

Provides secure connections to a circuit board.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for high-frequency applications.

No. of Terminals: 3

Standard number of terminals for a transistor.

Maximum Power Dissipation (Abs): 0.2 W

Can handle power dissipation up to 0.2 watts.

Package Style (Meter): CYLINDRICAL

Compact and space-saving package style.

Minimum DC Current Gain (hFE): 25

Ensures reliable amplification of input signal.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without issue.

Maximum Collector-Base Capacitance: 1 pF

Low capacitance for improved performance in high-frequency circuits.

Maximum Collector-Emitter Voltage: 12 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Highly reliable material for transistors.

Maximum Collector Current (IC): 0.05 A

Sufficient current handling capability for many applications.

Terminal Finish: TIN LEAD

Ensures good solderability and electrical conductivity.

Terminal Position: BOTTOM

Easy to integrate into circuit board layouts.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during soldering reflow process.

Nominal Transition Frequency (fT): 900 MHz

Suitable for high-frequency signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS5179 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS5179 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-324-1157, 5961013241157

NIIN

013241157

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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