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JANS2N3866AUB

Defense Logistics Agency

JANS2N3866AUB by Defense Logistics Agency

JANS2N3866AUB by Defense Logistics Agency is an NPN RF BJT with 3.5 pF max collector-base capacitance, 30V max collector-emitter voltage, and 0.4A max collector current. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal-sealed co-fired package body material and small outline package style.

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Vyrian

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AZTECH Wire

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Overview

Elevate your RF amplifier projects with the JANS2N3866AUB by Defense Logistics Agency. Manufactured with precision and expertise, this NPN bipolar junction transistor offers unparalleled performance in the ultra-high frequency band. Whether you're designing communication systems or radar applications, this ceramic, metal-sealed co-fired transistor ensures reliability and efficiency. Trust in the quality and value of Defense Logistics Agency products to take your projects to the next level. Experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures high durability and reliability in various operating conditions, making this transistor a robust choice.

Polarity or Channel Type: NPN

NPN configuration allows for efficient amplification of signals and easy integration into circuit designs, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity, making this transistor easy to use for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor provides high gain and low noise performance, making it an ideal choice for signal amplification.

Surface Mount: YES

Surface mount compatibility allows for easy and secure placement on PCBs, saving space and streamlining the manufacturing process.

Package Shape: RECTANGULAR

Rectangular package shape enhances heat dissipation and provides a compact form factor, making this transistor suitable for space-constrained applications.

Terminal Form: NO LEAD

No lead terminal form reduces parasitic capacitance and inductance, improving high-frequency performance and signal integrity in amplifier circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, this transistor is suitable for applications that require high-speed signal processing and transmission.

No. of Terminals: 3

3 terminals provide the necessary connections for input, output, and biasing, offering flexibility in circuit design and implementation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves board space and allows for dense PCB layouts, making this transistor ideal for compact electronic devices.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and enhances high-frequency performance, making this transistor a reliable choice for RF amplifier applications.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating ensures safe operation in a variety of voltage conditions, making this transistor suitable for diverse amplifier applications.

Transistor Element Material: SILICON

Silicon transistor element material provides superior performance and reliability over a wide temperature range, making this transistor suitable for demanding environments.

Maximum Collector Current (IC): 0.4 A

High collector current rating allows for efficient signal amplification and reliable operation, making this transistor suitable for various amplifier applications.

Terminal Position: DUAL

Dual terminal position simplifies the installation and connection process, ensuring easy integration into circuit designs and enhancing overall performance.

Reference Standard: MIL-19500/398

Compliance with MIL-19500/398 standards ensures high quality and reliability, making this transistor a trusted choice for military and aerospace applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) JANS2N3866AUB attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Defense Logistics Agency

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDSO-N3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Qualified

Reference Standard:

MIL-19500/398

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

JANS2N3866AUB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Defense Logistics Agency

As the nation’s combat logistics support agency, the Defense Logistics Agency manages the end-to-end global defense supply chain – from raw materials to end user disposition – for the five military services, 11 combatant commands, other federal, state and local agencies and partner and allied nations. DLA’s mission is to “deliver readiness and lethality to the Warfighter Always and support our nation through quality, proactive global logistics.” To accomplish this mission, DLA has a staff of about 25,000 employees divided into multiple supply chains that contract for material and services across the military classes of supply, to include: subsistence (food/water), clothing and textiles, bulk petroleum and other energy products, construction material and equipment, personal demand items, medical material and equipment, and repair parts for land, sea and air systems.

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