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TIS108

Texas Instruments

TIS108 by Texas Instruments

TIS108 by Texas Instruments is an NPN BJT transistor with a max power dissipation of 0.25W and max collector current of 0.05A, ideal for amplifier applications in the very high frequency band. With a min DC current gain of 25 and nominal transition frequency of 3.5MHz, it operates at temperatures up to 150°C in a cylindrical package with wire terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,189 parts In-Stock

1+ parts

-

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5,189

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Digiode

USA . 527 parts In-Stock

1+ parts

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527

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 819 parts In-Stock

1+ parts

$1.089

100+ parts

-

1k+ parts

$1.932

10k+ parts

-

819

$1.089

-

$1.932

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DigiPath Technology Company

USA . 918 parts In-Stock

1+ parts

$1.200

100+ parts

$1.104

1k+ parts

-

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918

$1.200

$1.104

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ChromeModa Solutions

Germany . 2,744 parts In-Stock

1+ parts

$1.224

100+ parts

$1.004

1k+ parts

-

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2,744

$1.224

$1.004

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IDEA Electronic Components Group

UK . 2,158 parts In-Stock

1+ parts

$1.224

100+ parts

-

1k+ parts

$1.102

10k+ parts

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2,158

$1.224

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$1.102

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AZTECH Wire

Italy . 565 parts In-Stock

1+ parts

$8.321

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565

$8.321

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Ampacity Inc.

Singapore . 1,577 parts In-Stock

1+ parts

$27.050

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-

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1,577

$27.050

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Semicontronic

India . 1,527 parts In-Stock

1+ parts

$41.050

100+ parts

$40.024

1k+ parts

$39.818

10k+ parts

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1,527

$41.050

$40.024

$39.818

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One Stop Electronics

USA . 1,643 parts In-Stock

1+ parts

$48.050

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1,643

$48.050

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Corphita

USA . 4,802 parts In-Stock

1+ parts

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4,802

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Corohmni

South Africa . 264 parts In-Stock

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264

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Overview

Enhance your electronic projects with the TIS108 by Texas Instruments, a high-quality RF Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Texas Instruments, a trusted name in the industry, this NPN transistor is perfect for amplifier applications in the very high-frequency band. With a maximum power dissipation of 0.25 W and a minimum DC current gain of 25, the TIS108 provides superior functionality in a compact cylindrical package. Get yours today and experience the value and benefits that Texas Instruments has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and helps protect the transistor from external factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other NPN components in a circuit, offering flexibility and compatibility in electronic designs.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to work with, especially for amplification applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides efficient amplification of signals with low power dissipation.

Package Shape: ROUND

The round package shape ensures easy mounting and placement within a circuit, offering convenience during installation.

Terminal Form: WIRE

The wire terminal form allows for easy connectivity and soldering, making it user-friendly for circuit assembly and maintenance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, ensuring reliability in various environments.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS108 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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