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BFG35,115

NXP Semiconductors

BFG35,115 by NXP Semiconductors

NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.692

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.692

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Vyrian

USA . 11,843 parts In-Stock

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VNN

France . 4,271 parts In-Stock

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Digiode

USA . 3,303 parts In-Stock

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Anansix

USA . 567 parts In-Stock

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Cogito LLC

Ukraine . 295 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,518 parts In-Stock

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$0.692

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$0.678

6,518

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Argo Parts USA

USA . 1,370 parts In-Stock

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$0.692

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$0.671

1,370

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$0.671

Netroflash

USA . 50 parts In-Stock

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$0.692

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$0.657

10k+ parts

$0.643

50

$0.692

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$0.657

$0.643

AZTECH Wire

Italy . 898 parts In-Stock

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$16.115

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Ampacity Inc.

Singapore . 1,412 parts In-Stock

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$45.050

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One Stop Electronics

USA . 662 parts In-Stock

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Perfect Parts

USA . 19,542 parts In-Stock

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UNI Independent Distributors

Spain . 4,519 parts In-Stock

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Microchip USA

USA . 468 parts In-Stock

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Corphita

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Overview

Upgrade your RF amplifier performance with the BFG35,115 by NXP Semiconductors. Designed with precision and quality in mind, this NPN transistor offers ultra-high frequency band capabilities, making it ideal for various applications. With a compact design and high power dissipation, this product delivers unmatched value and benefits to customers looking to enhance their amplifier systems. Trust NXP Semiconductors for reliable components that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, reducing production time and costs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and space-saving design for the transistor.

Terminal Form: GULL WING

The gull wing terminal form provides reliable connectivity and soldering during the PCB assembly process.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operates in the ultra-high frequency band, suitable for high-speed applications and high-frequency signal processing.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, the transistor can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides a compact form factor, ideal for space-constrained applications.

Maximum Power Dissipation Ambient: 1 W

Can dissipate up to 1 W of power in ambient conditions, ensuring reliable performance under various temperature environments.

Minimum DC Current Gain (hFE): 25

With a minimum DC current gain of 25, the transistor provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 175 °C

Can operate at temperatures up to 175°C, suitable for high-temperature applications.

Maximum Collector-Emitter Voltage: 18 V

Supports a maximum collector-emitter voltage of 18 V, making it suitable for low-voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring stable operation over a wide range of conditions.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15 A, the transistor can handle moderate current levels in amplifier circuits.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and easy PCB layout integration.

Case Connection: COLLECTOR

The case connection at the collector terminal facilitates efficient heat dissipation, enhancing the transistor's reliability and performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, the transistor can withstand typical soldering processes without degrading performance.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260°C, ensuring reliable solder joints during assembly.

Reference Standard: CECC

Complies with CECC standards for quality and performance, ensuring reliability and consistency in operation.

Nominal Transition Frequency (fT): 4000 MHz

With a high nominal transition frequency of 4000 MHz, the transistor provides excellent high-frequency performance in amplifier circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG35,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG35,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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