Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFG33 by NXP Semiconductors is an NPN RF small signal BJT designed for amplifier applications. It features a max collector current of 20 mA, operates up to 12 GHz, and supports a max power dissipation of 0.14 W in a compact surface mount package. Ideal for L-band frequency use, it ensures reliable performance in various electronic devices.
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Perfect Parts
This durable material ensures protection against environmental factors, making the transistor reliable in various applications.
NPN transistors are widely used in amplification and switching applications, providing versatility for designers.
Single configuration allows for simplified circuit design, making integration into systems easier and more efficient.
Designed specifically for amplification purposes, ensuring enhanced performance in audio and radio frequency applications.
Surface mount technology allows for reduced PCB space usage and automated assembly, lowering production costs.
The rectangular shape is conducive to compact designs and allows for better spacing and layout on PCBs.
Gull wing terminals provide excellent solder joint reliability, enhancing the durability and longevity of the connections.
Operation in the L band range makes it suitable for various communication applications, including TV and satellite.
Having 4 terminals offers flexibility in circuit design and allows for multiple connections without crowding.
Small outline packaging supports dense circuit board layouts, perfect for today’s compact electronic devices.
With a modest power dissipation rating, it remains cool during operation, preventing thermal issues in compact designs.
A minimum hFE of 50 ensures decent amplification, making it efficient for low-power applications.
High temperature tolerance increases its reliability and lifespan in demanding environments.
A collector-emitter voltage of 7V indicates suitability for low-voltage applications, expanding its potential uses.
Silicon-based transistors are known for stability and widespread availability, ensuring efficient and reliable performance.
This current rating makes it ideal for low-power circuits, maintaining efficiency without excessive energy consumption.
Dual terminal positioning helps in easier PCB layout design, improving the integration of components.
Collector case connection provides ease of access and reduces resistance in circuit applications.
Adherence to CECC standards ensures quality and reliability, marking this product suitable for high-reliability applications.
A high transition frequency indicates suitability for RF applications, ensuring effective performance in high-frequency operations.
RF Small Signal Bipolar Junction Transistors (BJT) BFG33 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Qualification:
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFG33 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.75
SB
8541.21.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
SMBJ18CA
Db Lectro
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
OPA2227UA
Texas Instruments
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
Sangdest Microelectronics (Nanjing)
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Fagor Electronica S Coop
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN65HVD230DR
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
Bytesonic Electronics
Yangzhou Yangjie Electronics
Nexperia
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
2N2222A
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
Synsemi
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
KSC1393Y
The Onsemi KSC1393Y is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 90, and operates in the very high frequency band up to 700 MHz. With a max collector-emitter voltage of 30V and power dissipation of 0.25W, it is suitable for high-frequency amplification tasks.
2N3866
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; JEDEC-95 Code: TO-205AD;
BFR193L3E6327XTMA1
BFR193L3E6327XTMA1 by Infineon Technologies is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 70 and a max collector-emitter voltage of 12V, making it suitable for amplifier applications in the L Band frequency range up to 8000 MHz. This surface-mount chip carrier package features no-lead terminals and gold finish, meeting AEC-Q101 standards.
934067703235
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
MMBTH17LT1
MMBTH17LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for ultra-high frequency band applications like amplifiers, featuring a small outline package with gull wing terminals. The transistor's silicon element material ensures high performance in RF signal amplification.
BFR193FH6327XTSA1
BFR193FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, max collector current of 0.08A, and transition frequency of 8000MHz. Ideal for amplifier circuits in automotive electronics due to AEC-Q101 compliance.
D2T918
D2T918 by Texas Instruments is an NPN BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It has a min hFE of 20, max VCE of 15V, and IC of 0.05A. The package is cylindrical with 6 terminals and isolated case connection.
BFQ19SH6327XTSA1
Infineon's BFQ19SH6327XTSA1 is a NPN BJT transistor for L Band applications. With max fT of 5500 MHz, it has VCE of 15V and IC of 0.21A. This single configuration transistor operates b/w -65°C to 150°C, making it suitable for amplifier circuits in RF applications.
2N2222
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
BFT93,215
NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.
MCH4016
The Onsemi MCH4016 is a NPN RF BJT transistor with 4 terminals, operating in the ultra-high frequency band up to 10GHz. It has a max power dissipation of 0.35W and can handle a collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and small outline package style.
BFR93AE6327HTSA1
BFR93AE6327HTSA1 by Infineon Technologies is a NPN RF BJT with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.3W, hFE of 70, and fT of 6000MHz. This transistor operates at up to 150°C and features a collector-emitter voltage of 12V.
2N918
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
HFA3101BZ
Intersil
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;
BFU520XR,235
NXP Semiconductors' BFU520XR,235 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with a max fT of 10500 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.45 W and can handle up to 16 V collector-emitter voltage.
MMBTH10LT1
MMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max operating temp of 150°C. It has a transition frequency of 650 MHz and a collector-emitter voltage of 25V, making it ideal for ultra-high frequency amplifier applications in small outline packages.
55GN01FA-TL-H
The Onsemi 55GN01FA-TL-H is an NPN RF BJT with a max power dissipation of 0.25W, fT of 3000MHz, and hFE of 100. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.
SD1169
NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON;
BFR106,215
NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.
UMX5NTR
ROHM
ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.
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BFG35,115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;
BFG310/XR,215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .06 W; Maximum Collector Current (IC): .01 A;
BFG33/X
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .02 A; Maximum Collector-Emitter Voltage: 7 V;
BFG32
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
BFG33TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .02 A; JESD-30 Code: R-PDSO-G4;
BFG31TRL
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BFG33/XR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Qualification: Not Qualified;
BFG310W/XR
BFG31,115
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;
BFG325W/XR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;
BFG325W/XR,115
BFG31T/R
BFG33TRL13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .02 A; Package Shape: RECTANGULAR;
BFG310/XR
BFG325/XR
BFG31TRL13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G4;
BFG31
BFG310W/XR,115
BFG31-T
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BFG35
Philips Components
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .15 A; Case Connection: COLLECTOR;
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