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BFG33/X

NXP Semiconductors

BFG33/X by NXP Semiconductors

BFG33/X by NXP Semiconductors is an NPN RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.14W, operates up to 12GHz, and supports surface mount with a rectangular package. Ideal for L-band frequency use in compact designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,283 parts In-Stock

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Vyrian

USA . 2,243 parts In-Stock

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Anansix

USA . 521 parts In-Stock

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Native Components

USA . 44 parts In-Stock

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$5.300

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One Stop Electronics

USA . 279 parts In-Stock

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$18.050

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Corphita

USA . 4,326 parts In-Stock

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Northwest PG Solutions

USA . 876 parts In-Stock

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$5.194

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UNI Independent Distributors

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Overview

Unlock unparalleled performance with the BFG33/X by NXP Semiconductors, your go-to solution for high-quality RF small signal amplification. Renowned for their cutting-edge technology and reliability, NXP delivers a transistor designed to meet the demands of diverse applications in communications and consumer electronics. Benefit from superior gain, compact packaging, and exceptional thermal stability, ensuring your projects thrive under pressure while maximizing efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy is lightweight and cost-effective, making this transistor suitable for high-volume applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching, offering versatility in circuit design.

Configuration: SINGLE

A single configuration simplifies the circuit design, reducing size and complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor provides high performance in audio and RF applications.

Surface Mount: YES

Surface mount technology enables compact designs and high-density circuit layouts, enhancing PCB efficiency.

Package Shape: RECTANGULAR

The rectangular shape supports efficient layout options on PCBs, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and reliable connections, beneficial for automated assembly processes.

Highest Frequency Band: L BAND

Operates in the L band, making it ideal for RF applications including communication systems.

No. of Terminals: 4

Four terminals provide versatile connection options while maintaining compact size.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient, ideal for portable electronic devices.

Maximum Power Dissipation Ambient: 0.14 W

With a maximum power dissipation of 0.14W, this transistor manages thermal performance effectively in standard applications.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 ensures adequate amplification capabilities for various circuit designs.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures makes this transistor reliable in demanding environments.

Maximum Collector-Emitter Voltage: 7 V

A maximum collector-emitter voltage of 7V makes it suitable for low-voltage signal applications.

Transistor Element Material: SILICON

Silicon as the element material ensures stability and efficiency, commonly preferred in electronic devices.

Maximum Collector Current (IC): 0.02 A

With a collector current limit of 0.02A, this transistor is ideal for low-power applications.

Terminal Position: DUAL

Dual terminal positioning offers adaptability in circuit design, catering to various layout configurations.

Case Connection: COLLECTOR

Collector case connection provides straightforward integration into electronic circuits, enhancing usability.

Reference Standard: CECC

Adherence to CECC standards indicates reliability and quality assurance, assuring performance in critical applications.

Nominal Transition Frequency (fT): 12000 MHz

A high transition frequency of 12000 MHz supports wideband performance, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG33/X attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

7 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.14 W

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG33/X Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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