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MPSA10G

Onsemi

MPSA10G by Onsemi

The Onsemi MPSA10G is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for ultra-high frequency applications, it has a plastic/epoxy body, cylindrical package style, and operates up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,548 parts In-Stock

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Vyrian

USA . 1,350 parts In-Stock

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SupplyDigital Components

Austria . 7,966 parts In-Stock

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Problanco Electronics

Mexico . 6,903 parts In-Stock

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TANS Electronics

Latvia . 5,776 parts In-Stock

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Corphita

USA . 2,241 parts In-Stock

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UHIMA Technologies

Türkiye . 774 parts In-Stock

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Kulean Microsystems

USA . 726 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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Overview

Enhance your electronic projects with the MPSA10G by Onsemi, a high-quality RF Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers superior performance in ultra-high-frequency applications. With a maximum transition frequency of 650 MHz and a collector-emitter voltage of 25 V, this transistor provides unmatched reliability and efficiency. Whether you're working on radio frequency amplification or signal processing, the MPSA10G delivers the value and benefits you need to take your projects to the next level. Trust Onsemi for top-of-the-line components that bring your designs to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for various applications.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying design and assembly processes.

Package Shape: ROUND

The round package shape allows for easy mounting and handling of the transistor in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, ensuring stable performance of the transistor.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

This transistor is capable of operating at ultra high frequencies, making it suitable for high-speed data transmission and communication applications.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit configurations and easy connections in various electronic applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides efficient heat dissipation and compact design, ideal for space-constrained applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature environments without compromising performance.

Maximum Collector-Base Capacitance: 0.7 pF

Low collector-base capacitance minimizes signal distortion and interference, ensuring high signal integrity in RF applications.

Maximum Collector-Emitter Voltage: 25 V

The high collector-emitter voltage rating allows for reliable operation in high-voltage circuits, making this transistor versatile in various applications.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and reliability, making them a popular choice in electronic devices and circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides a stable and corrosion-resistant connection, ensuring long-term reliability and performance of the transistor.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and soldering process, enhancing the ease of assembly and integration of the transistor.

Nominal Transition Frequency (fT): 650 MHz

High nominal transition frequency indicates fast switching speeds and high-frequency operation, making this transistor suitable for RF and high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSA10G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA10G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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