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MPSA10RLRPG

Onsemi

MPSA10RLRPG by Onsemi

MPSA10RLRPG by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It offers a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 726 parts In-Stock

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Digiode

USA . 370 parts In-Stock

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370

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Problanco Electronics

Mexico . 7,007 parts In-Stock

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TANS Electronics

Latvia . 6,868 parts In-Stock

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SupplyDigital Components

Austria . 6,227 parts In-Stock

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Kulean Microsystems

USA . 2,881 parts In-Stock

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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Corohmni

South Africa . 330 parts In-Stock

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Corphita

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Overview

Boost your RF signal performance with the MPSA10RLRPG by Onsemi. Manufactured to the highest quality standards, this NPN transistor offers unparalleled reliability and efficiency for your electronic projects. Whether you're designing communication systems, radar systems, or RF amplifiers, this small signal BJT is the perfect choice. Experience ultra-high frequency band capabilities and seamless integration with its through-hole terminal form. Trust Onsemi to deliver innovative solutions that exceed your expectations. Upgrade your circuits today with the MPSA10RLRPG and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer high current gain.

Configuration: SINGLE

Simplified design with a single transistor setup for easier integration into circuits.

Package Shape: ROUND

Allows for easy mounting and installation in various applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-frequency applications such as RF signals and communication systems.

No. of Terminals: 3

Provides necessary connections for biasing and signal input/output.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without significant performance degradation.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance helps in high-frequency operation and reduces signal distortion.

Maximum Collector-Emitter Voltage: 25 V

Can withstand voltage spikes and variations in the circuit.

Transistor Element Material: SILICON

Silicon transistors are reliable, efficient, and widely used in various electronic applications.

Terminal Finish: MATTE TIN

Provides good conductivity and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast switching and amplification of high-frequency signals.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSA10RLRPG attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA10RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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