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MPSA10RLRP

Onsemi

MPSA10RLRP by Onsemi

MPSA10RLRP by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It features a max Vce of 25V, fT of 650MHz, and low Ccb of 0.7pF. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,484 parts In-Stock

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2,484

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Vyrian

USA . 1,840 parts In-Stock

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1,840

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Problanco Electronics

Mexico . 6,521 parts In-Stock

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6,521

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Kulean Microsystems

USA . 1,920 parts In-Stock

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TANS Electronics

Latvia . 1,145 parts In-Stock

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SupplyDigital Components

Austria . 970 parts In-Stock

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970

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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484

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Corohmni

South Africa . 386 parts In-Stock

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Corphita

USA . 235 parts In-Stock

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Overview

Enhance your RF signal processing with the MPSA10RLRP by Onsemi. This high-quality NPN bipolar junction transistor offers superior performance and reliability, making it the perfect choice for a wide range of applications in the ultra-high frequency band. With its durable plastic/epoxy package and through-hole terminal form, this transistor ensures seamless integration and long-lasting functionality. Trust Onsemi's expertise in RF small signal BJT technology to deliver outstanding value and benefits to your projects. Experience superior quality and performance with the MPSA10RLRP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile and widely compatible.

Configuration: SINGLE

Simplifies circuit design and integration, ideal for straightforward applications.

Package Shape: ROUND

Easy to handle and mount, facilitating installation and maintenance.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections, reducing the risk of disconnection.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications such as radio communications and radar systems.

No. of Terminals: 3

Simple and straightforward connections, reducing the complexity of circuit design.

Package Style (Meter): CYLINDRICAL

Compact design that saves space and allows for efficient PCB layout.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in various environments.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low-voltage applications, offering reliable operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon-based technology provides stable and consistent performance over time.

Terminal Finish: TIN LEAD

Provides good solderability and ensures a strong bond between the transistor and PCB.

Terminal Position: BOTTOM

Facilitates PCB mounting and enables efficient heat dissipation.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast switching speeds and improved signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSA10RLRP attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA10RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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