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KSC2223Y

Onsemi

KSC2223Y by Onsemi

KSC2223Y by Onsemi is an NPN RF BJT transistor with a VCEsat of 0.3V, hFE of 90, and fT of 600MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector current of 0.02A.

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Digiode

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Vyrian

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Problanco Electronics

Mexico . 7,012 parts In-Stock

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SupplyDigital Components

Austria . 5,566 parts In-Stock

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TANS Electronics

Latvia . 4,669 parts In-Stock

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Corphita

USA . 1,191 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 516 parts In-Stock

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Corohmni

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Overview

Upgrade your RF amplifier with the KSC2223Y by Onsemi. This NPN transistor offers unparalleled performance in the very high-frequency band, making it ideal for a wide range of applications. With a maximum VCEsat of just 0.3V and a minimum DC current gain of 90, this transistor delivers exceptional power dissipation and efficiency. The Gull Wing terminal form and small outline package make installation a breeze, while the high-quality construction ensures long-lasting reliability. Trust Onsemi for superior quality and innovation in RF small signal BJT technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external elements, making this transistor suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switches, making this product versatile for different applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient soldering onto circuit boards, saving space and assembly time.

Maximum VCEsat: 0.3 V

Low VCEsat ensures efficient power usage and high performance in amplification applications.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and mounting on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide secure mechanical connections, preventing disconnections and ensuring reliable operation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for very high-frequency applications, offering high-speed performance and reliable signal amplification.

No. of Terminals: 3

Three terminals provide necessary connections for power, input, and output, ensuring proper functionality in amplifier circuits.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation allows for efficient operation and prevents overheating in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards and enables compact design in electronic systems.

Minimum DC Current Gain (hFE): 90

High minimum DC current gain ensures reliable amplification and signal processing in electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature enables reliable operation in various environmental conditions without risk of overheating.

Maximum Collector-Emitter Voltage: 20 V

High maximum collector-emitter voltage allows for handling higher voltages without breakdown or damage.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability, ensuring long-term functionality in electronic circuits.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in cold environments without compromising performance or reliability.

Maximum Collector Current (IC): 0.02 A

Low maximum collector current ensures safe operation and prevents overheating in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and allows for easy integration into different circuit layouts.

Nominal Transition Frequency (fT): 600 MHz

High nominal transition frequency enables fast signal processing and high-frequency response, making it ideal for amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC2223Y attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

90

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC2223Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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