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TIS125

Texas Instruments

TIS125 by Texas Instruments

TIS125 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 30, and fT of 450MHz. It is used in RF applications due to its very high frequency band capability, operating at up to 150°C with a VCE max of 30V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,292 parts In-Stock

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4,292

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Vyrian

USA . 3,069 parts In-Stock

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3,069

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Distributors (Availability)

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Parana Technologies

USA . 2,287 parts In-Stock

1+ parts

$0.511

100+ parts

-

1k+ parts

$1.630

10k+ parts

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2,287

$0.511

-

$1.630

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DigiPath Technology Company

USA . 476 parts In-Stock

1+ parts

$0.563

100+ parts

$0.518

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-

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476

$0.563

$0.518

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ChromeModa Solutions

Germany . 6,734 parts In-Stock

1+ parts

$0.574

100+ parts

$0.471

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6,734

$0.574

$0.471

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IDEA Electronic Components Group

UK . 1,432 parts In-Stock

1+ parts

$0.574

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-

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$0.517

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1,432

$0.574

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$0.517

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Semicontronic

India . 544 parts In-Stock

1+ parts

$3.050

100+ parts

$2.974

1k+ parts

$2.958

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544

$3.050

$2.974

$2.958

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AZTECH Wire

Italy . 518 parts In-Stock

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$5.770

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518

$5.770

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Ampacity Inc.

Singapore . 973 parts In-Stock

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$9.050

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973

$9.050

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One Stop Electronics

USA . 753 parts In-Stock

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$54.050

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753

$54.050

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Corphita

USA . 1,768 parts In-Stock

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1,768

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Corohmni

South Africa . 423 parts In-Stock

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Overview

Elevate your RF signal processing with the TIS125 by Texas Instruments, a top-quality NPN bipolar junction transistor designed for very high frequency band applications. Manufactured with precision and expertise, this single-configured transistor offers exceptional performance and reliability. From wireless communication systems to radar and microwave circuits, the TIS125 delivers unmatched value and efficiency, with a maximum power dissipation of 0.25 W and a nominal transition frequency of 450 MHz. Trust in Texas Instruments for cutting-edge technology that powers your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, providing flexibility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various projects.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This transistor is suitable for applications requiring very high frequency signals, ensuring reliable performance in such scenarios.

Maximum Power Dissipation: 0.25 W

With a high maximum power dissipation, this transistor can handle significant power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in environments with elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 30 V

The high maximum voltage provides flexibility in circuit design and compatibility with a wide range of applications.

Nominal Transition Frequency: 450 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications where fast signal transitions are required.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS125 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS125 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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