Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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2N3571 by Texas Instruments is an NPN BJT transistor with a max fT of 1500 MHz. It has a Pd of 0.2 W and Vce(max) of 15V, ideal for amplifier applications in the UHF band. The package is cylindrical with 4 terminals and can operate up to 175°C.
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Metal package provides better heat dissipation, improving the overall reliability and performance of the transistor.
NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance.
Simplified single configuration makes it easier to integrate into circuits and reduces complexity.
Designed specifically for amplification, ensuring optimal performance in amplification circuits.
Suitable for applications requiring high frequency operation, such as communication systems and radar.
Efficient power dissipation capability allows for reliable operation without overheating.
Round package shape provides mechanical stability and ease of mounting in circuits.
Wire terminals offer convenient connectivity options and are commonly used in various circuit designs.
4 terminals provide flexibility in circuit connections and enable specific functionality.
Higher collector-emitter voltage rating allows for operation in circuits with higher voltage requirements.
Able to handle moderate collector current levels, making it suitable for a variety of applications.
High transition frequency enables high-speed switching and amplification performance in RF applications.
RF Small Signal Bipolar Junction Transistors (BJT) 2N3571 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
2N3571 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-00-411-7583, 5961004117583, 5961-00-185-1812, 5961001851812, 5961-00-586-4814, 5961005864814, 5961-00-917-3444, 5961009173444, 5961-01-023-5130, 5961010235130, 5961-14-323-8379, 5961143238379, 5961-99-648-8617, 5961996488617
NIIN
004117583, 001851812, 005864814, 009173444, 010235130, 143238379, 996488617
Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.
President, CEO
Haviv Ilan
Chairman
Richard K. Templeton
Senior VP, CFO
Rafael R. Lizardi
M - Fab
Fabrication
Fab Initiation
1997
USA
South Portland
Wafer Capacity
32,000
D - FAB
1966
Dallas
42,000
D MOS - 6
2002
25,000
D MOS - 5
1995
75,000
Miho - 8
1980
Japan
Inashiki
43,000
S FAB 1
Sherman
91,000
F - FAB
2001
Germany
Freising
37,000
R Fab 1
2010
Richardson
40,000
D HC Line
1999
2,000
JV3
Aizu Wakamatsu
45,000
C - FAB
2007
China
Chengdu
30,000
L - Fab
2015
Lehi
70,000
R - Fab 2
2022
S - FAB 2
2025
S - FAB 3
2028
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
BAV99
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Telefunken
MBRS360T3G
Onsemi
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
Sangdest Microelectronics (Nanjing)
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
2N2222A
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
Gec Plessey Semiconductors
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
2N7002
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
LM358N
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMPQ2369G
MMPQ2369G by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 15V, fT of 550MHz, and IC of 0.5A. The transistor is surface mountable with a small outline package and Gull Wing terminals.
MPS3563
MPS3563 by Onsemi is an NPN RF BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05A and Ptot of 0.625W, making it suitable for ultra-high frequency amplifier applications. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
BSX28
BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.
KSC1393
KSC1393 by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, nominal transition frequency of 700 MHz, and max collector-emitter voltage of 30 V. This transistor operates in the very high-frequency band and has a max power dissipation of 0.25 W at an ambient temperature of 150 °C.
MMBT918LT1
MMBT918LT1 by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and operates up to 150 °C, making it suitable for ultra-high frequency amplifier applications in small outline packages.
MPSH11RL
MPSH11RL by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp. tolerance (150 °C). The transistor, in a cylindrical package, has 3 terminals and silicon element material for optimal performance.
NTE2402
Nte Electronics
NTE2402 by Nte Electronics is an RF BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the ultra-high frequency band up to 5000 MHz, with a max collector-emitter voltage of 15V and a power dissipation of 0.2W. The package is small outline, surface mountable, with Gull Wing terminals.
934063134215
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;
JANS2N2907AUB
Vpt Components
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel; Reference Standard: MIL-19500;
BFS17,215
The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.
TIS126
TIS126 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 600MHz. It is commonly used as an amplifier in the very high-frequency band applications due to its 0.4W power dissipation capability and SILICON element material.
BF959RLRM
BF959RLRM by Onsemi is a NPN RF BJT with 700MHz fT. Operating at 150 °C, it has VCE of 20V and IC of 0.1A. Ideal for very high frequency applications due to its single configuration and cylindrical package style.
MMBTH81LT1
Motorola
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BFT93,215
NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.
934064615115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .07 A; Additional Features: LOW NOISE;
START420
START420 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, operates in the C band, and comes in a compact rectangular package with gull-wing terminals. Ideal for surface mount designs, it supports efficient signal amplification.
HFA3102B96
Intersil
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1;
MMBTH81D87Z
MMBTH81D87Z by National Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the very high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly.
2N3137
2N3137 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 2W, operates up to 175 °C, and has a nominal transition frequency of 750 MHz. Ideal for very high-frequency circuits, it ensures reliable performance.
General Diode
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
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DRV3255EPAPRQ1
DRV3255EPAPRQ1 by Texas Instruments is a Motion Control IC with 64 terminals, operating at -40 to 150°C. It is an AEC-Q100 compliant automotive-grade IC for Brushless DC Motor control, supporting supply voltages from 5V to 90V and output currents up to 3.5A. The package style includes a flatpack with heat sink/slug, suitable for surface mount applications in automotive systems.
UCC27284DRCR
UCC27284DRCR by Texas Instruments is a MOSFET gate driver with 2 channels, capable of handling a max output current of 3.5A. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 30µs. This chip carrier package with very thin profile is suitable for high side driver applications requiring fast switching speeds.
TPS7A4301DGQR
TPS7A4301DGQR by Texas Instruments is an adjustable positive single output LDO regulator with a max output voltage of 14.5V and a dropout voltage of 0.6V. It operates in temperatures ranging from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
DRV8316RRGFR
DRV8316RRGFR by Texas Instruments is a motion control IC with a rectangular package and a terminal form of gull wing. It has a max output current of 8A and can operate at temperatures ranging from -40 to 125°C. This IC is commonly used as a brushless DC motor controller in automotive applications.
DS160PT801ACBR
DS160PT801ACBR by Texas Instruments is a bus controller IC with 339 terminals, operating at -40 to 85°C. It supports PCI bus compatibility with a data transfer rate of 2000 MBps. This CMOS technology device has a thin profile and fine pitch package suitable for industrial applications.
CC2662R1FTWRGZRQ1
CC2662R1FTWRGZRQ1 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU, 48 MHz clock frequency, and 81920 bytes of RAM. Ideal for industrial applications, it features 8 ADC channels, 32 DMA channels, and peripherals like AES and PWM for efficient system integration.
LMR43610MSC3RPERQ1
LMR43610MSC3RPERQ1 by Texas Instruments is a 9-terminal switching regulator with a max output voltage of 32V and max output current of 1A. Ideal for automotive applications, it operates b/w -40 to 150°C, featuring a buck switcher config and PWM control mode at up to 2200kHz frequency.
2N3569
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: O-XBCY-W4; JEDEC-95 Code: TO-105;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N3570
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
2N3572
2N3553
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): 1 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .35 A; Maximum Power Dissipation Ambient: 7 W;
2N3563
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
Micro Electronics
2N3571
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Form: WIRE;
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Package Shape: ROUND;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Position: BOTTOM;
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
Crimson Semiconductor
Hi-tron Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Finish: Tin/Lead (Sn/Pb);
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