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2N3571

Semicoa

2N3571 by Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

Median Price

$3.540

Lifecycle Status

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14

In-Stock Inventory

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TEDSS.com

USA . 188 parts In-Stock

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$4.990

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Digiode

USA . 7,959 parts In-Stock

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Vyrian

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Bristol Electronics

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ECAB

Sweden . 573 parts In-Stock

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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Resion

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LittleDiode

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Odi Ramu Company

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ICP Electronique

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ChromeModa Solutions

Germany . 346 parts In-Stock

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IDEA Electronic Components Group

UK . 2,291 parts In-Stock

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DigiPath Technology Company

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MKK Technologies

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Northwest PG Solutions

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AZTECH Wire

Italy . 453 parts In-Stock

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One Stop Electronics

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Corphita

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Parana Technologies

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Assy Fe

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N3571 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Semicoa

Specs

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N3571 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-411-7583, 5961004117583, 5961-00-185-1812, 5961001851812, 5961-00-586-4814, 5961005864814, 5961-00-917-3444, 5961009173444, 5961-01-023-5130, 5961010235130, 5961-14-323-8379, 5961143238379, 5961-99-648-8617, 5961996488617

NIIN

004117583, 001851812, 005864814, 009173444, 010235130, 143238379, 996488617

Manufacturer Highlights

Semicoa

Trusted Everywhere for Mission Success is our commitment statement to our customers. This means the Semicoa Team operates as one to ensure the product exceeds expectation. SEMICOA is a leader in the design and development of bipolar power devices for high-reliability military, defense, aerospace, and space applications. Quality and high reliability are cornerstones upon which space, military, and aerospace applications are built. In many instances, there is absolutely no room for error. These critical industries require a partner that they can trust to deliver time after time. For 50 years, SEMICOA has been Trusted Everywhere. Semicoa specializes in the manufacture of discrete silicon semiconductors focusing on small signal transistors for space, military, and aerospace industries globally. The design, development and wafer fabrication operations are located in Southern California. The company achieved the highest U.S. government qualification (JANS, MIL-PRF-19500, Space Level) for the production of electronic components and it is AS9100:2009D certified. Semicoa is ITAR registered. Semicoa is also an active member of the JEDEC Community. Its leading edge manufacturing facility performs discrete and hybrid assembly utilizing innovative techniques and processes. High volume production is performed on dedicated assembly lines to reduce cost and increase throughput. Semicoa constantly expands product, equipment and production capabilities to meet the growing demand of its customers for high reliability and Rad Hard products.

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