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2SA1857T-5

Onsemi

2SA1857T-5 by Onsemi

Onsemi's 2SA1857T-5 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 135, and fT of 750MHz. Ideal for amplifier applications in the very high frequency band due to its small outline package and max operating temperature of 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,851 parts In-Stock

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Vyrian

USA . 1,396 parts In-Stock

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Kulean Microsystems

USA . 4,444 parts In-Stock

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Problanco Electronics

Mexico . 3,155 parts In-Stock

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SupplyDigital Components

Austria . 1,210 parts In-Stock

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TANS Electronics

Latvia . 973 parts In-Stock

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UHIMA Technologies

Türkiye . 970 parts In-Stock

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Northwest PG Solutions

USA . 766 parts In-Stock

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Native Components

USA . 443 parts In-Stock

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$4.258

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Corohmni

South Africa . 169 parts In-Stock

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Corphita

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Overview

Unleash the power of innovation with the 2SA1857T-5 by Onsemi, a top-of-the-line RF Small Signal BJT that delivers exceptional performance and reliability. As a trusted manufacturer, Onsemi ensures superior quality and precision engineering in every product. Ideal for amplifier applications, this PNP transistor offers seamless integration and optimal signal amplification. With a very high frequency band and low VCEsat, the 2SA1857T-5 guarantees maximum efficiency and minimal power consumption. Elevate your projects with this cutting-edge component and experience unparalleled value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various amplifier applications.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and simplifying manufacturing processes.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates high efficiency and minimal power loss, making it an energy-efficient choice for amplifier circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operates effectively in very high frequency applications, making it suitable for high-performance amplifier circuits.

Minimum DC Current Gain (hFE): 135

High DC current gain ensures stable and reliable amplification performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 12 V

Allows for safe operation at higher voltage levels, increasing the versatility of the transistor in different amplifier applications.

Nominal Transition Frequency (fT): 750 MHz

High transition frequency enables the transistor to amplify high-frequency signals effectively, making it suitable for amplifying signals in the MHz range.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SA1857T-5 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.6 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

135

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1857T-5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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