Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .03 A; Terminal Form: THROUGH-HOLE;
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RF Small Signal Bipolar Junction Transistors (BJT) 2SA1161TPE2 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba
Additional Features:
Maximum Collector Current (IC):
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JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
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Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
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Terminal Finish:
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Transistor Element Material:
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2SA1161TPE2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
LM358DT
STMicroelectronics
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
SMBJ18CA
Changzhou Starsea Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Vishay Intertechnology
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
BAV99
Kingwell Technonlogy
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
MMBT2907ALT1G
Rochester Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
CRCW040210K0FKED
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
2N2222A
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
1N4148WS
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Weitron Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;
LM555CMX
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
KYOCERA AVX
2N5399
2N5399 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is commonly used for switching applications in the ultra-high-frequency band due to its high power dissipation of 0.36W and low collector-base capacitance of 3pF.
MPS3640
Semiconductor Technology
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
BF959RLRA
BF959RLRA by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operates at up to 150 °C, making it suitable for various RF small signal designs.
BFR93AW-GS08
Vishay Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
KSC2223YMTF
KSC2223YMTF by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max operating temp of 150°C and can handle a max collector-emitter voltage of 20V. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mounting.
JAN2N2907A
Vpt Components
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 60 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
2SC2814-3
Onsemi's 2SC2814-3 is an NPN RF BJT with a max fT of 320 MHz. It has a VCE of 20V and IC of 0.03A, ideal for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.
NSVMMBTH10LT1G
NSVMMBTH10LT1G by Onsemi is an NPN RF BJT with 650MHz fT, 60 hFE, and 0.3W Pd. Ideal for high-frequency applications in surface-mount configurations due to its 150°C max operating temp and matte tin terminal finish.
BFR181E6327HTSA1
Infineon Technologies
BFR181E6327HTSA1 by Infineon Technologies is a NPN RF BJT with 12V VCEO, 0.02A IC, and 8000MHz fT. Ideal for L Band applications, it features a small outline package with gull wing terminals for surface mount amplifiers. AEC-Q101 compliant, it has 0.45pF max CCB capacitance and silicon transistor element.
BFG425WT/R
NXP Semiconductors
NXP Semiconductors' BFG425WT/R is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135W, fT of 25GHz, and hFE of 50. Suitable for switching purposes with a max collector current of 0.03A and max collector-emitter voltage of 4.5V.
SS9018HBU
SS9018HBU by Onsemi is a NPN RF Small Signal Bipolar Junction Transistor (BJT) with a max operating temperature of 150 °C. It has a min DC current gain (hFE) of 97 and a nominal transition frequency (fT) of 1100 MHz. This transistor is commonly used in amplifier applications.
MPSH17RL
MPSH17RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for amplifier applications in the very high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. The transistor operates at a max temperature of 150 °C, making it suitable for various RF signal amplification needs.
BFU590GX
The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.
3003
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL; Terminal Form: FLAT;
MPS5179RL1
MPS5179RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 900MHz. It is commonly used in amplifier applications due to its very high-frequency band capabilities. The transistor has a single configuration, cylindrical package style, and through-hole terminal form for easy integration.
2SC5662T2LP
ROHM
ROHM 2SC5662T2LP is a NPN RF BJT transistor with max. fT of 3200 MHz, hFE of 56, and VCE(max) of 11V. Ideal for S Band applications like amplifiers due to its small outline package and high transition frequency capability.
BFU520WX
The NXP Semiconductors BFU520WX is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 10GHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly. Operating from -40°C, it offers a peak reflow temperature of 260°C and complies with AEC-Q101 and IEC-60134 standards.
2N4104
2N4104 by Texas Instruments is an NPN BJT with 400 min hFE, 0.05A IC, and 90MHz fT. Ideal for amplifier applications due to its 0.3W power dissipation and SILICON material. Its ROUND package with WIRE terminals makes it suitable for RF signal amplification in various electronic devices.
MRF559
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .15 A; Maximum Collector-Base Capacitance: 3 pF; Transistor Application: AMPLIFIER;
BFR92A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
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2SA1857
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
2SA1857T-5
2SA1245
Toshiba
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
2SA1245TE85L
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;
2SA1245TE85R
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .03 A; Qualification: Not Qualified;
2SA1161
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;
2SA1459-L
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1800 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;
2SA1458-K-A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 510 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
2SA1461-A
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 510 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
2SA1458-L
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 510 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
2SA1461Y22-A
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 510 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
2SA1458-L-A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 510 MHz; Maximum Collector Current (IC): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
2SA1459-K-A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1800 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PSIP-T3;
2SA1458-K
2SA1459-L-A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1800 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1;
2SA1458-M
2SA1458-M-A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 510 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Base Capacitance: 4.5 pF;
2SA1459-A
2SA1206-A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1800 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .05 A;
2SA1960
Hitachi
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .3 A;
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