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A5T4261

Texas Instruments

A5T4261 by Texas Instruments

A5T4261 by Texas Instruments is a PNP BJT transistor with 3 terminals, 0.03A max collector current, and 2MHz fT. It is used as an amplifier in the ultra high frequency band applications due to its 15V max collector-emitter voltage and 0.5W power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,829 parts In-Stock

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8,829

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Digiode

USA . 1,170 parts In-Stock

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1,170

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 239 parts In-Stock

1+ parts

$0.065

100+ parts

-

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$0.063

239

$0.065

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-

$0.063

Northwest PG Solutions

USA . 539 parts In-Stock

1+ parts

$0.072

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-

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$0.064

539

$0.072

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-

$0.064

Parana Technologies

USA . 2,036 parts In-Stock

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$0.620

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-

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$1.692

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2,036

$0.620

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$1.692

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DigiPath Technology Company

USA . 1,006 parts In-Stock

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$0.683

100+ parts

$0.628

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-

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1,006

$0.683

$0.628

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ChromeModa Solutions

Germany . 5,928 parts In-Stock

1+ parts

$0.697

100+ parts

$0.572

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5,928

$0.697

$0.572

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IDEA Electronic Components Group

UK . 322 parts In-Stock

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$0.697

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$0.627

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322

$0.697

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$0.627

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AZTECH Wire

Italy . 205 parts In-Stock

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$17.012

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205

$17.012

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Semicontronic

India . 1,226 parts In-Stock

1+ parts

$43.050

100+ parts

$41.974

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$41.758

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1,226

$43.050

$41.974

$41.758

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One Stop Electronics

USA . 1,407 parts In-Stock

1+ parts

$54.050

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1,407

$54.050

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Corphita

USA . 2,811 parts In-Stock

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2,811

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Corohmni

South Africa . 379 parts In-Stock

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Overview

Experience high-quality performance with the A5T4261 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers superior RF Small Signal Bipolar Junction Transistors (BJTs) like the A5T4261, perfect for amplifier applications in the ultra-high frequency band. With a maximum power dissipation of 0.5W and a minimum DC current gain of 25, this PNP transistor offers unmatched value and reliability. Trust Texas Instruments to provide top-notch products like the A5T4261 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good protection and is suitable for a range of environments, making the transistor durable and long-lasting.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits and can provide efficient amplification.

Configuration: SINGLE

Simple single configuration makes it easy to use and integrate in various circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable performance in amplifying signals in electronic devices.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for applications requiring high frequency operation, providing reliable performance in ultra-high frequency range.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, it can handle power efficiently and effectively.

Maximum Collector-Emitter Voltage: 15 V

Can withstand up to 15V collector-emitter voltage, providing a wide range of applications.

Nominal Transition Frequency (fT): 2 MHz

With a transition frequency of 2MHz, the transistor is capable of high-speed performance and is suitable for various applications requiring fast switching.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) A5T4261 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

A5T4261 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-051-2256, 5961010512256

NIIN

010512256

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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