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NSVMMBTH81LT3G

Onsemi

NSVMMBTH81LT3G by Onsemi

NSVMMBTH81LT3G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high frequency band up to 600 MHz with a max VCEsat of 0.5 V. This small outline package has a max collector-emitter voltage of 20V and can handle a collector current of 0.05A, making it suitable for RF signal amplification in various electronic devices.

Median Price

$0.095

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

$0.095

100+ parts

$0.089

1k+ parts

$0.081

10k+ parts

-

10,000

$0.095

$0.089

$0.081

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Verical

USA . 590,000 parts In-Stock

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-

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590,000

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Distributors (In-Stock)

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Digiode

USA . 1,342 parts In-Stock

1+ parts

$0.090

100+ parts

-

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1,342

$0.090

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Nova Conductors

Japan . 150 parts In-Stock

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$0.124

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150

$0.124

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Vyrian

USA . 156,325 parts In-Stock

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156,325

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Chip Stock

USA . 78,000 parts In-Stock

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78,000

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IBS Electronics

USA . 25,000 parts In-Stock

1+ parts

-

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$0.079

25,000

-

-

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$0.079

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

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$0.103

20,000

-

-

-

$0.103

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 156,440 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

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156,440

$0.081

-

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Semicontronic

India . 156,439 parts In-Stock

1+ parts

$0.081

100+ parts

$0.079

1k+ parts

$0.079

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-

156,439

$0.081

$0.079

$0.079

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Corphita

USA . 1,225 parts In-Stock

1+ parts

$0.086

100+ parts

-

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1,225

$0.086

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Corohmni

South Africa . 393 parts In-Stock

1+ parts

$0.095

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393

$0.095

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Argo Parts USA

USA . 4,829 parts In-Stock

1+ parts

$0.124

100+ parts

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$0.120

4,829

$0.124

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$0.120

Continental Prestige Electronics

USA . 33 parts In-Stock

1+ parts

$0.124

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$0.122

33

$0.124

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$0.122

Advanced Electronics

New Zealand . 41 parts In-Stock

1+ parts

$1.890

100+ parts

$1.796

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$1.796

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41

$1.890

$1.796

$1.796

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Aztec Data Supply Inc.

USA . 316 parts In-Stock

1+ parts

$1.958

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316

$1.958

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QUARKTWIN TECHNOLOGY LTD

USA . 14,076 parts In-Stock

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14,076

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Problanco Electronics

Mexico . 6,302 parts In-Stock

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6,302

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SupplyDigital Components

Austria . 4,581 parts In-Stock

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4,581

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TANS Electronics

Latvia . 3,825 parts In-Stock

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3,825

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kulean Microsystems

USA . 1,548 parts In-Stock

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1,548

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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$0.122

1k+ parts

$0.118

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$0.115

1,000

-

$0.122

$0.118

$0.115

UHIMA Technologies

Türkiye . 141 parts In-Stock

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141

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Overview

Unlock the power of high-quality RF Small Signal Bipolar Junction Transistors with the NSVMMBTH81LT3G by Onsemi. Manufactured by a trusted industry leader, this PNP transistor offers exceptional performance in amplifier applications, delivering value and reliability to customers. With a very high frequency band and low VCEsat, this transistor is perfect for demanding projects where precision and efficiency are key. Elevate your designs with the NSVMMBTH81LT3G and experience the advantages of top-tier technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: PNP

Suitable for various electronic circuit designs.

Configuration: SINGLE

Simplified setup and usage for amplification purposes.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks.

Surface Mount: YES

Easy integration onto circuit boards.

Maximum VCEsat: 0.5 V

Low voltage drop across the collector-emitter junction for efficient operation.

Package Shape: RECTANGULAR

Space-efficient design for compact setups.

Terminal Form: GULL WING

Facilitates proper soldering and connection.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for high-frequency applications.

No. of Terminals: 3

Simplified connections for setup.

Maximum Power Dissipation (Abs): 0.225 W

Efficient power handling capability.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package design.

Minimum DC Current Gain (hFE): 60

Consistent performance and amplification.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Collector-Base Capacitance: 0.85 pF

Low capacitance for improved performance.

Maximum Collector-Emitter Voltage: 20 V

Suitable for various voltage requirements.

Transistor Element Material: SILICON

Reliable and durable material for transistor construction.

Minimum Operating Temperature: -55 °C

Suitable for operation in low temperature environments.

Maximum Collector Current (IC): 0.05 A

Adequate current handling capacity.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term usage.

Terminal Position: DUAL

Facilitates proper connections in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Reference Standard: AEC-Q101

Complies with industry quality standards.

Nominal Transition Frequency (fT): 600 MHz

High-frequency capability for efficient signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVMMBTH81LT3G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.225 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

NSVMMBTH81LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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